2020) Monolayer MoSe₂-based tunneling field effect transistor for ultrasensitive strain sensing. IEEE Transactions on Electron Devices, (Abstract-This paper presents a detailed investigation of the impact of mechanical strain on transition metal dichalcogenide (TMD) material based tunneling field-effect transistor (TFET). First, the impact of mechanical strain on material parameters of MoSe2 is calculated using the first principle of density functional theory (DFT) under meta generalized gradient approximation (MGGA). The device performance of the TMD TFET has been studied by solving the self-consistent 3D Poisson and Schrodinger equations in non-equilibrium Green's function (NEGF) framework. The results demonstrate that both ION and IOFF increase with uniaxial tensile strain, however, the change in ION/IOFF ratio remains small. This strain dependent performance change in TMD TFET has been utilized to design an ultra-sensitive strain sensor. The device shows a sensitivity (ΔIDS/IDS) of 3.61 for a strain of 2%. Due to the high sensitivity to the strain, these result shows the potential of using MoSe2 TFET as a flexible strain sensor. Furthermore, the strained TFET is analyzed for backend circuit performance. It is observed that the speed and energy efficiency of 10 stage inverter chain based on controlled strain improve substantially in comparison to unstrained TFET.Index Terms-TMD TFET, transition metal dichalcogenides, uniaxial strain.