Monolayer MoSe₂-Based Tunneling Field Effect Transistor for Ultrasensitive Strain Sensing

Abstract

2020) Monolayer MoSe₂-based tunneling field effect transistor for ultrasensitive strain sensing. IEEE Transactions on Electron Devices, (Abstract-This paper presents a detailed investigation of the impact of mechanical strain on transition metal dichalcogenide (TMD) material based tunneling field-effect transistor (TFET). First, the impact of mechanical strain on material parameters of MoSe2 is calculated using the first principle of density functional theory (DFT) under meta generalized gradient approximation (MGGA). The device performance of the TMD TFET has been studied by solving the self-consistent 3D Poisson and Schrodinger equations in non-equilibrium Green's function (NEGF) framework. The results demonstrate that both ION and IOFF increase with uniaxial tensile strain, however, the change in ION/IOFF ratio remains small. This strain dependent performance change in TMD TFET has been utilized to design an ultra-sensitive strain sensor. The device shows a sensitivity (ΔIDS/IDS) of 3.61 for a strain of 2%. Due to the high sensitivity to the strain, these result shows the potential of using MoSe2 TFET as a flexible strain sensor. Furthermore, the strained TFET is analyzed for backend circuit performance. It is observed that the speed and energy efficiency of 10 stage inverter chain based on controlled strain improve substantially in comparison to unstrained TFET.Index Terms-TMD TFET, transition metal dichalcogenides, uniaxial strain.

Flexible electronics based on 2D transition metal dichalcogenides

“…Compared to MoS 2 , MoSe 2 is more feasible for TFT applications due to its relatively narrower bandgap with a better tunneling probability and a lower subthreshold swing. 228 Thus, a exible MoSe 2 -based strain sensor has been fabricated. Under the strain, the device exhibits little changes in the on/off current ratio and the SS value, delivering a sensitivity of 3.61 towards a strain of 2%.…”

Scalably Nanomanufactured Atomically Thin Materials‐Based Wearable Health Sensors

“…The piezoresistive‐type strain sensor is among the most common 2D materials‐based strain sensors due to its robustness and simplicity in operation principle and structure. [ 595–603 ] For example, Lan et al [ 603 ] prepared a conductive composite of MoS 2 nanosheet and Ag NWs encapsulated by PDMS to form a stretchable device. The integrated composite shows an excellent stretchability up to 70%, with a maximum GF as high as 215.4.…”

Ultra‐thin ISFET‐based sensing systems

“…This effect termed as the piezoresistive effect, which has as macroscopic effect the change in MOS transistors (MOSTs) drain-current and speed have found many applications such as the integration of pressure and strain sensors with CMOS circuits or the exploitation of bending to enhance the performance of CMOS circuits sensors. [89,[95][96][97] In our previous study, [89] the piezoresistive nature of silicon was exploited demonstrating real-time active drift compensation. More specifically, as the sequential externally applied dynamic strain on ultra-thin silicon substrate is increasing, the energy of the split conduction sub-band Δ4 reduces with respect to Δ2.…”