Flexible electronics based on 2D transition metal dichalcogenides

Jiang, Dongting; Liu, Zhiyuan; Xiao, Zhe; Qian, Zhengfang; Sun, Yanan; Zeng, Zhiyuan; Wang, Renheng

doi:10.1039/d1ta06741a

Cited by 89 publications

(58 citation statements)

References 306 publications

(307 reference statements)

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“…TMDCs are also promising materials for the emerging fields of flexible electronics and displays, where they may be used as thin-film transistors and sensors for gases, light, biomolecules, and pressure, for example. 39 − 41 The highest temperature that typical polymer-based flexible substrates withstand range from 100 to 400 °C. 41 − 43 For one of the most common and cost-effective plastics, poly(ethylene terephthalate) (PET), temperature should not exceed 100–150 °C to avoid its deformation.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry

et al. 2022

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Two-dimensional transition metal dichalcogenides, such as MoS 2 , are intensely studied for applications in electronics. However, the difficulty of depositing large-area films of sufficient quality under application-relevant conditions remains a major challenge. Herein, we demonstrate deposition of polycrystalline, wafer-scale MoS 2 , TiS 2 , and WS 2 films of controlled thickness at record-low temperatures down to 100 °C using plasma-enhanced atomic layer deposition. We show that preventing excess sulfur incorporation from H 2 S-based plasma is the key to deposition of crystalline films, which can be achieved by adding H 2 to the plasma feed gas. Film composition, crystallinity, growth, morphology, and electrical properties of MoS x films prepared within a broad range of deposition conditions have been systematically characterized. Film characteristics are correlated with results of field-effect transistors based on MoS 2 films deposited at 100 °C. The capability to deposit MoS 2 on poly(ethylene terephthalate) substrates showcases the potential of our process for flexible devices. Furthermore, the composition control achieved by tailoring plasma chemistry is relevant for all low-temperature plasma-enhanced deposition processes of metal chalcogenides.

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Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry

et al. 2022

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“…The same properties that make 2D materials so interesting for next generation NEMS devices-first of all, their inherent flexibility-make them also promising for innovative technological applications; such as wearable electronics (i.e., smart glasses, smartwatches, electronic tattoos), [226] flexible optoelectronics (i.e., flexible displays, flexible transistors), [227,228] or skinmountable devices (i.e., touch, tactile, chemical, or biosignal sensors, displays, data transmission devices). [226] Such applications ideally require large-area nano-manufacturing of devices The frequency response measured for a 2 μm diameter monolayer NEMS resonator clearly shows a deviation from a harmonic response for increasing the optical excitation power above -9 dBm, thus indicating that the resonator is oscillating in the nonlinear regime.…”

Section: Nanomechanical Resonators and Other Applicationsmentioning

confidence: 99%

Mechanical, Elastic, and Adhesive Properties of Two‐Dimensional Materials: From Straining Techniques to State‐of‐the‐Art Local Probe Measurements

Giorgio

Blundo

Pettinari

et al. 2022

Adv Materials Inter

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While static methods are often essential to make a material suited to a specific application, by permanently altering its properties, dynamic ones potentially enable their real-time modulation, paving the way for the development of reconfigurable devices.Within this context, strain engineering has historically been regarded as a "static" tuning method, which exploited the crystal deformations induced by the juxtaposition of materials with different lattice constants to manipulate the properties of semiconductor heterostructures [1] and improve the performance of electronic devices (e.g., CMOS-based logic technologies [2] ). In recent years, however, strain-engineering paradigms have begun to shift, leading to the development of new devices, capable of generating a dynamic modulation of the mechanical deformations induced in the active materials (and, thus, of their optoelectronic properties).Micro-and nano-electromechanical systems (MEMS and NEMS), for example, have long been used for sensing applications, thanks to their ability to transduce external stresses (e.g., applied pressure/weights, molecule adsorption,...) into electrical signals. In the opposite regime they are, at least in principle, 2D materials, such as graphene, hexagonal boron nitride (hBN), and transition-metal dichalcogenides (TMDs), are intrinsically flexible, can withstand very large strains (>10% lattice deformations), and their optoelectronic properties display a clear and distinctive response to an applied stress. As such, they are uniquely positioned both for the investigation of the effects of mechanical deformations on solid-state systems and for the exploitation of these effects in innovative devices. For example, 2D materials can be easily employed to transduce nanometric mechanical deformations into, e.g., clearly detectable electrical signals, thus enabling the fabrication of high-performance sensors; just as easily, however, external stresses can be used as a "knob" to dynamically control the properties of 2D materials, thereby leading to the realization of strain-tuneable, fully reconfigurable devices. Here, the main methods are reviewed to induce and characterize, at the nm level, mechanical deformations in 2D materials. After presenting the latest results concerning the mechanical, elastic, and adhesive properties of these unique systems, one of their most promising applications is briefly discussed: the realization of nano-electromechanical systems based on vibrating 2D membranes, potentially capable of operating at high frequencies (>100 MHz) and over a large dynamic range.The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/admi.202102220.

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“…Recently, TFTs on flexible substrates have emerged as a critical element in flexible applications, such as flexible displays, electronic skin, and smart textiles [ 64 ]. Oxide semiconductors, such as ZTO, have outstanding characteristics, such as strong electrical performance and good flexibility.…”

Section: Zto Film and Applicationsmentioning

confidence: 99%

Zinc–Tin Oxide Film as an Earth-Abundant Material and Its Versatile Applications to Electronic and Energy Materials

Seo

Yoo

2022

Membranes

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Zinc–Tin Oxide (ZTO) films potentially offer desirable properties for next-generation devices and are considered promising candidates due to the following merits: (I) zinc and tin are abundant on Earth, with estimated reserves of approximately 250 million tons and 4.3 billion tons, respectively, (II) zinc and tin are harmless to the human body, and (III) large-area manufacturing with various synthesis processes is available. Considering the advantages and promises of these ZTO films, this review provides a timely overview of the progress and efforts in developing ZTO-based electronic and energy devices. This review revisits the ZTO films used for various device applications, including thin-film transistors, memory devices, solar cells, and sensors, focusing on their strong and weak points. This paper also discusses the opportunities and challenges for using ZTO films in further practical electronic and energy device applications.

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Flexible electronics based on 2D transition metal dichalcogenides

Abstract: Flexible devices play an important role in various fields such as electronics, industry, healthcare, military, space exploration, and so on. Traditional materials used for flexible devices include silicon, inorganic oxides,...

Cited by 89 publications

References 306 publications

Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry

Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry

Mechanical, Elastic, and Adhesive Properties of Two‐Dimensional Materials: From Straining Techniques to State‐of‐the‐Art Local Probe Measurements

Zinc–Tin Oxide Film as an Earth-Abundant Material and Its Versatile Applications to Electronic and Energy Materials

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