Ultra-high photoresponse with superiorly sensitive metal-insulator-semiconductor (MIS) structured diodes for UV photodetector application

Marnadu, R.; Chandrasekaran, J.; Maruthamuthu, S.; Balasubramani, V.; Vivek, P.; Suresh, R.

doi:10.1016/j.apsusc.2019.02.214

Cited by 94 publications

(13 citation statements)

References 66 publications

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“…The prepared WO 3 and Sn–WO 3 precursor solutions of 3 mL were deposited separately on the cleaned p-Si substrates (1 cm × 1 cm) by the jet nebulizer spray pyrolysis technique with different concentrations of Sn (0, 4, 8, and 12 wt.%) the copper (Cu) metal contact was coated on the Sn–WO 3 /p-Si using dc sputtering (Model Name: HIND high vacuum-PS 2000) with 4 mm diameter and 500 nm thickness. The instrument details and deposition conditions of the metal contacts were mentioned in their previous work [ 36 , 37 ]. The Sn-WO 3 /p-Si diode showed a positive light response of high reverse saturation current under illumination [ 38 ].…”

Section: Photodetectormentioning

confidence: 99%

A Review on the Properties and Applications of WO3 Nanostructure−Based Optical and Electronic Devices

et al. 2021

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Tungsten oxide (WO3) is a wide band gap semiconductor with unintentionally n−doping performance, excellent conductivity, and high electron hall mobility, which is considered as a candidate material for application in optoelectronics. Several reviews on WO3 and its derivatives for various applications dealing with electrochemical, photoelectrochemical, hybrid photocatalysts, electrochemical energy storage, and gas sensors have appeared recently. Moreover, the nanostructured transition metal oxides have attracted considerable attention in the past decade because of their unique chemical, photochromic, and physical properties leading to numerous other potential applications. Owing to their distinctive photoluminescence (PL), electrochromic and electrical properties, WO3 nanostructure−based optical and electronic devices application have attracted a wide range of research interests. This review mainly focuses on the up−to−date progress in different advanced strategies from fundamental analysis to improve WO3 optoelectric, electrochromic, and photochromic properties in the development of tungsten oxide−based advanced devices for optical and electronic applications including photodetectors, light−emitting diodes (LED), PL properties, electrical properties, and optical information storage. This review on the prior findings of WO3−related optical and electrical devices, as well as concluding remarks and forecasts will help researchers to advance the field of optoelectric applications of nanostructured transition metal oxides.

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Section: Photodetectormentioning

confidence: 99%

A Review on the Properties and Applications of WO3 Nanostructure−Based Optical and Electronic Devices

et al. 2021

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“…It indicates that the surface of the Cu 0.8 Ni 0.2 O film is smoother than that of the CuO film. The smaller surface roughness will generate a homogeneous electric field through the whole device . The average thickness of the Cu 1– x Ni x O films is about 44 nm, which can be observed from SEM images in Figure S4a–c (Supporting Information).…”

Section: Results and Discussionmentioning

confidence: 56%

“…The smaller surface roughness will generate a homogeneous electric field through the whole device. 16 The To further explore the device performance, CuO film photodetectors were fabricated. Figure 2a shows the room temperature current−voltage curves of the CuO photodetector under laser illumination.…”

Section: Resultsmentioning

confidence: 99%

High Responsivity and External Quantum Efficiency Photodetectors Based on Solution-Processed Ni-Doped CuO Films

Yin

Yang

Zhao

et al. 2020

ACS Appl. Mater. Interfaces

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Photodetectors based on p-type metal oxides are still a challenge for optoelectronic device applications. Many effects have been paid to improve their performance and expand their detection range. Here, high-quality Cu1–x Ni x O (x = 0, 0.2, and 0.4) film photodetectors were prepared by a solution process. The crystal quality, morphology, and grain size of Cu1–x Ni x O films can be modulated by Ni doping. Among the photodetectors, the Cu0.8Ni0.2O photodetector shows the maximum photocurrent value (6 × 10–7 A) under a 635 nm laser illumination. High responsivity (26.46 A/W) and external quantum efficiency (5176%) are also achieved for the Cu0.8Ni0.2O photodetector. This is because the Cu0.8Ni0.2O photosensitive layer exhibits high photoconductivity, low surface states, and high crystallization after 20% Ni doping. Compared to the other photodetectors, the Cu0.8Ni0.2O photodetector exhibits the optimal response in the near-infrared region, owing to the high absorption coefficient. These findings provide a route to fabricate high-performance and wide-detection range p-type metal oxide photodetectors.

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“…x = 0.4 concentration revealed a high detectivity of D* = 0.5059 10 12 Jones, which is comparatively higher than by Su and Ouyang et al [64][65][66][67][68][69][70][71][72][73][74][75] The obtained higher detectivity suggests a low noise level of the fabricated MOS diodes. The fabricated MOS diode with superior detectivity (i.e.…”

Section: Qe ¼ (7) Qlmentioning

confidence: 58%

Inherent characteristics of ultra-photosensitive Al/Cu–CeO₂/p-Si metal oxide semiconductor diodes

Manikandan¹,

Marnadu

Chandrasekaran

et al. 2022

J. Mater. Chem. C

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Ultra-high photoresponse with superiorly sensitive metal-insulator-semiconductor (MIS) structured diodes for UV photodetector application

Cited by 94 publications

References 66 publications

A Review on the Properties and Applications of WO3 Nanostructure−Based Optical and Electronic Devices

A Review on the Properties and Applications of WO3 Nanostructure−Based Optical and Electronic Devices

High Responsivity and External Quantum Efficiency Photodetectors Based on Solution-Processed Ni-Doped CuO Films

Inherent characteristics of ultra-photosensitive Al/Cu–CeO₂/p-Si metal oxide semiconductor diodes

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Ultra-high photoresponse with superiorly sensitive metal-insulator-semiconductor (MIS) structured diodes for UV photodetector application

Cited by 94 publications

References 66 publications

A Review on the Properties and Applications of WO3 Nanostructure−Based Optical and Electronic Devices

A Review on the Properties and Applications of WO3 Nanostructure−Based Optical and Electronic Devices

High Responsivity and External Quantum Efficiency Photodetectors Based on Solution-Processed Ni-Doped CuO Films

Inherent characteristics of ultra-photosensitive Al/Cu–CeO2/p-Si metal oxide semiconductor diodes

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Inherent characteristics of ultra-photosensitive Al/Cu–CeO₂/p-Si metal oxide semiconductor diodes