Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3

Chikoidze, E.; Tchelidze, Tamar; Sartel, Corinne; Chi, Zeyu; Kabouche, Riad; Madaci, Ismail; Rubio, Carlos; Mohamed, Hagar; Sallet, Vincent; Medjdoub, Farid; Pérez‐Tomás, Amador; Dumont, Y.

doi:10.1016/j.mtphys.2020.100263

Cited by 36 publications

(26 citation statements)

References 43 publications

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“…Ultra-wide bandgap (UWBG) semiconductor oxides have recently rejuvenated [1,2] and are now attracting considerable interest as an advanced platform for energy electronics, including deep UV optoelectronics and power devices owing to their ultra-high critical electric field [3], control of the electrical conductivity, chemical stability and the possibility of grown large single crystals (up to 6-inch) at a reduced cost (i.e., Silicon-like Czochralski (CZ) method) [4]. The binary oxide semiconductor gallium oxide (Ga2O3) (Egap ~4.6-4.9 eV) is somehow heralding this emerging field, but complex gallium oxide alloys are widely investigated in particular Ga2O3:Al2O3 [5] and Ga2O3:ZnO [6].…”

Section: Introductionmentioning

confidence: 99%

Bipolar self-doping in ultra-wide bandgap spinel ZnGa2O4

Chi

Tarntair

Frégnaux

et al. 2021

Materials Today Physics

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Section: Introductionmentioning

confidence: 99%

Bipolar self-doping in ultra-wide bandgap spinel ZnGa2O4

Chi

Tarntair

Frégnaux

et al. 2021

Materials Today Physics

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“…Indeed, an ultra-large breakdown electric field, (which is usually assumed to be of the order of E c ~8 MVcm −1 ), is a prime material advantage of Ga 2 O 3 . However, this value may be well underestimated; it was very recently suggested that the critical electric field of Ga 2 O 3 could be as large as 13.2 MVcm −1 , if the residual donors are efficiently removed [ 24 ].…”

Section: Gallium Oxide (Ga 2 O 3 )mentioning

confidence: 99%

“…The growth rate is generally from several hundred nm/h [ 100 , 101 ] to10 µm/h [ 102 , 103 , 104 ]. This technique is also available for both n - and p -type dupability [ 24 , 105 ] ( Figure 4 ).…”

Section: Gallium Oxide (Ga 2 O 3 )mentioning

confidence: 99%

Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation

et al. 2022

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Currently, a significant portion (~50%) of global warming emissions, such as CO2, are related to energy production and transportation. As most energy usage will be electrical (as well as transportation), the efficient management of electrical power is thus central to achieve the XXI century climatic goals. Ultra-wide bandgap (UWBG) semiconductors are at the very frontier of electronics for energy management or energy electronics. A new generation of UWBG semiconductors will open new territories for higher power rated power electronics and solar-blind deeper ultraviolet optoelectronics. Gallium oxide—Ga2O3 (4.5–4.9 eV), has recently emerged pushing the limits set by more conventional WBG (~3 eV) materials, such as SiC and GaN, as well as for transparent conducting oxides (TCO), such asIn2O3, ZnO and SnO2, to name a few. Indeed, Ga2O3 as the first oxide used as a semiconductor for power electronics, has sparked an interest in oxide semiconductors to be investigated (oxides represent the largest family of UWBG). Among these new power electronic materials, AlxGa1-xO3 may provide high-power heterostructure electronic and photonic devices at bandgaps far beyond all materials available today (~8 eV) or ZnGa2O4 (~5 eV), enabling spinel bipolar energy electronics for the first time ever. Here, we review the state-of-the-art and prospects of some ultra-wide bandgap oxide semiconductor arising technologies as promising innovative material solutions towards a sustainable zero emission society.

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“…[29] Moreover, Zn doping has been demonstrated to enhance critical electrical field up to 13.2 MV cm À1 in MOVPE grown β-Ga 2 O 3 . [30] In view of aforementioned facts, the development of Zn doping processes in epitaxial growth of β-Ga 2 O 3 is strongly motivated.…”

Section: Introductionmentioning

confidence: 99%

Doping of β‐Ga₂O₃ Layers by Zn Using Halide Vapor‐Phase Epitaxy Process

Pozina

Hsu

Abrikossova

et al. 2021

Physica Status Solidi (a)

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Development of ultrawide bandgap semiconductor β‐Ga2O3 is important considering its great potential for high‐power high‐voltage electronic applications. Halide vapor‐phase epitaxy is used to produce Zn‐doped β‐Ga2O3 layers on sapphire (0001). Zn doping concentrations is estimated to be in the range between 6 × 1018 and 2.5 × 1020 cm−3. As a precursor for Zn acceptor dopant, ZnCl2 formed by flowing of diluted Cl2 gas over a melt of metallic Zn is used. Modeling of the growth chamber and calculations of precursor concentrations inside the growth zone is carried out to optimize process parameters. The Zn doping is not affecting the optical emission properties; however, growth under oxygen‐rich conditions and formation of crystalline particles on the layer surface are factors responsible for modification of β‐Ga2O3 luminescence spectrum. It is observed that the UV band at 3.35 eV vanishes, whereas relative intensities of the blue and green bands at 2.4–2.8 eV increase.

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Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3

Abstract: high critical electric field of 13.2 MV/cm for Zn-doped p-type ß-Ga2O3. Materials Today Physics, (2020).

Cited by 36 publications

References 43 publications

Bipolar self-doping in ultra-wide bandgap spinel ZnGa2O4

Bipolar self-doping in ultra-wide bandgap spinel ZnGa2O4

Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation

Doping of β‐Ga₂O₃ Layers by Zn Using Halide Vapor‐Phase Epitaxy Process

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Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3

Abstract: high critical electric field of 13.2 MV/cm for Zn-doped p-type ß-Ga2O3. Materials Today Physics, (2020).

Cited by 36 publications

References 43 publications

Bipolar self-doping in ultra-wide bandgap spinel ZnGa2O4

Bipolar self-doping in ultra-wide bandgap spinel ZnGa2O4

Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation

Doping of β‐Ga2O3 Layers by Zn Using Halide Vapor‐Phase Epitaxy Process

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Doping of β‐Ga₂O₃ Layers by Zn Using Halide Vapor‐Phase Epitaxy Process