Ultimate nano-electronics: New materials and device concepts for scaling nano-electronics beyond the Si roadmap

Collaert, N.; Alian, A.; Arimura, Hiroaki; Boccardi, G.; Eneman, G.; Franco, J.; Ivanov, Ts.; Lin, Dennis; Loo, Roger; Merckling, Clément; Mitard, J.; Pourghaderi, Mohammad Ali; Rooyackers, R.; Sioncke, Sonja; Sun, Jianwu; Vandooren, A.; Veloso, A.; Verhulst, Anne S.; Waldron, Niamh; Witters, L.; Zhou, D. L.; Barla, K.; Thean, Aaron

doi:10.1016/j.mee.2014.08.005

Cited by 36 publications

(27 citation statements)

References 62 publications

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“…Within the continuous scaling, now aiming at sub‐10 nm nodes, ameliorations become extremely challenging. The introduction of high mobility materials such as Si 1− x Ge x for pMOS and III–V for nMOS devices is therefore being considered despite integration difficulties . Advanced pMOS field effect transistors (FET), with compressively strained Si 1− x Ge x channels grown on top of Si 1− y Ge y (with x > y ) strain relaxed buffers (SRBs) and embedded in fin and gate‐all‐around (GAA) architectures, are for instance being actively developed .…”

Section: Introductionmentioning

confidence: 99%

Low‐Temperature Selective Growth of Heavily Boron‐Doped Germanium Source/Drain Layers for Advanced pMOS Devices

Porret

Vohra

Nakazaki³

et al. 2019

Physica Status Solidi (a)

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The peculiarities of heavily boron-doped germanium, selectively grown at low temperature by means of a cyclic deposition and etch chemical vapor deposition process, are investigated through the analysis of the structural and electrical material properties. The incorporation of B in Ge can exceed 6 Â 10 20 cm À3 , close to a factor 100 above the solubility limit, without any significant degradation of the Ge:B crystalline quality, although high B-doping induces an unwanted contraction of the Ge lattice. Micro-Hall effect measurements and the multiring circular transmission line method are used to evaluate the active carrier concentrations and resistivities of Ti/Ge:B contacts. Even though the resistivity of asgrown layers saturates for chemical B concentrations approaching 1 Â 10 21 cm À3 and increases beyond that level, a contact resistivity below 3 Â 10 À9 Ω cm 2 is obtained for the highest active doping concentration, showing that a compromise must be found to decrease the total contact resistance. Finally, first principles simulations are used to understand dopant deactivation mechanisms in the Ge:B system. In conclusion, the formation of boron-interstitial clusters is most likely the cause for electrical performance degradation at high doping values.

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Section: Introductionmentioning

confidence: 99%

Low‐Temperature Selective Growth of Heavily Boron‐Doped Germanium Source/Drain Layers for Advanced pMOS Devices

Porret

Vohra

Nakazaki³

et al. 2019

Physica Status Solidi (a)

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“…[1][2][3][4][5][6][7] These so-called high mobility materials are implemented in new device concepts and novel architectures, for example tunnel FETs and gate-all-around devices, in order to meet the power and performance requirements. Reference 7 gives an overview of the innovations in materials and new device concepts that will be needed to continue Moore's law to sub-7nm technology nodes.…”

mentioning

confidence: 99%

Processing Technologies for Advanced Ge Devices

Loo

Hikavyy

Witters

et al. 2016

ECS J. Solid State Sci. Technol.

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With the continued scaling of CMOS devices below the 10 nm node, process technologies become more and more challenging as the allowable thermal budget for device processing continuously reduces. This is especially the case during epitaxial growth, where a reduction of the thermal budget is required for a number of potential reasons for example to avoid uncontrolled layer relaxation of strained layers, surface reflow of narrow fin structures, as well as doping diffusion and material intermixing. Further aspects become even more challenging when Ge is used as a high-mobility channel material and when the device concept moves from a FinFET design to a nanowire FET design (also called Gate-All-Around FET). In this contribution we address some of the challenges involved with the integration of high mobility Group IV materials in these advanced device structures.

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“…The precise band structure of a photonic crystal built up with other materials than the SiO 2 /Ge combination will be different from what is shown in Figure , but at least from a conceptual point of view, it is expected that the same effect, with a fundamental mode on a dielectric band and with an effective dielectric constant of the complete system close to the less absorptive material, is present in other systems as well. In order to verify this statement and driven by the recent surge of interest in III‐V compounds in the nano‐electronics and ‐photonics industry, the presence of a fundamental nanofocusing mode and the associated Raman enhancement effect was examined in a periodic array of InGaAs finFETs. Here, the structure consists of 100 nm‐thick InGaAs channels grown on top of a GaAs buffer on a (001) Si substrate, and the fins are structured along similar patterns as was the case for the Ge fins.…”

Section: Nanofocusing In Other Materialsmentioning

confidence: 99%

Advanced Raman Spectroscopy Using Nanofocusing of Light

et al. 2017

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Raman spectroscopy is uniquely sensitive to crucial material properties like stress and composition, but is inherently diffraction-limited, impeding its application potential in nanostructured devices. Under correct polarization conditions, the Raman response from a periodic array of fins is dramatically enhanced inside the semiconductor material, re-enabling fast and non-destructive optical characterization of deep-subwavelength semiconductor patterns. In this paper, it is shown that the effect is not limited to the material system where it was first observed, and results of nanofocused Raman spectroscopy in a variety of semiconductor materials are presented. The authors illustrate and discuss how the universality of the enhancement creates a unique potential for non-invasive and rapid stress and composition measurements at the nanoscale.

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Ultimate nano-electronics: New materials and device concepts for scaling nano-electronics beyond the Si roadmap

Cited by 36 publications

References 62 publications

Low‐Temperature Selective Growth of Heavily Boron‐Doped Germanium Source/Drain Layers for Advanced pMOS Devices

Low‐Temperature Selective Growth of Heavily Boron‐Doped Germanium Source/Drain Layers for Advanced pMOS Devices

Processing Technologies for Advanced Ge Devices

Advanced Raman Spectroscopy Using Nanofocusing of Light

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