Über die Halbleitereigenschaften des Kupferoxyduls. IV Leitfähigkeitsmessungen bei hohen Temperaturen

Abstract

An Kupferoxydulproben werden Leitfähigkeitsmessungen innerhalb des Existenzgebietes vorgenommen. Es wird festgestellt, daß die früher gefundene Gesetzmäßigkeit nur bei Sauerstoffdrucken größer als etwa 10−2 Torr gilt. Vermutlich ist die Ursache für die bei tiefen Drucken beobachtete Abweichung aut eine Art von Eigenleitung zurückzuführen, die bei höheren Drucken durch die Störstellenleitung verdeckt wird.

Point defects diagrams for pure and doped copper oxide Cu2±δO in the temperature range of 873–1473K

“…However, when the oxygen pressure decreases, these values rapidly increase to large values. The character of these changes is consistent with the experimentally observed changes in the dependence of the electrical conductivity on p O 2 [33][34][35][36][37][38][39][40][41][42][43][44][45]. As shown in Figs.…”

“…On the other hand, the exponents 1/n he ¼ 1/n s ffi 1/8 for the dependence of the concentration of electronic defects and the electrical conductivity on p O 2 indicated the dominance of electron holes [33][34][35][36][37][38][39][40][41][42][43][44][45]. Fig.…”

“…The above studies show that the copper oxide is a p-type semiconductor and that the dominant defects are electron holes. This type of defect is indicated by both the dependence of the electrical conductivity on the oxygen pressure (exponent: 1/6-1/8) [14,[33][34][35][36][37][38][39][40][41][42][43][44][45] and relatively high values of the thermoelectric force, which increase with the reduction of the oxygen pressure [44,50]. As already mentioned, the oxide reaches the stoichiometric composition in the range of its existence.…”

“…The possibility of the existence of oxygen vacancies was previously postulated by Bloom [32] whilst analyzing the optical and electrical properties of Cu 2 À d O. Parallel to the studies of the deviation from the stoichiometry, other studies were performed that concerned the electrical conductivity [32][33][34][35][36][37][38][39][40][41][42][43][44][45], Seebeck effect [34,44,[46][47][48][49][50] and Hall effect [51][52][53][54][55][56][57]. The above studies show that the copper oxide is a p-type semiconductor and that the dominant defects are electron holes.…”