Über die Halbleitereigenschaften des Kupferoxyduls. I Das Herstellungsverfahren unter Berücksichtigung der Stabilitätsbedingungen

Blankenburg, G.; Kassel, Karl

doi:10.1002/andp.19524450402

Cited by 24 publications

(1 citation statement)

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“…Secondly, in the very high temperatures range, Cu,O is highly reactive. Blankenburg [29] and Zuev [28] showed that a t temperatures above 1010 "C Cu,O reacts with a great number of materials. Therefore, the samples have t o be suspended with Cu-wires in a similar way as during the initial oxidation.…”

Section: Growth Of the Cu20 Samplesmentioning

confidence: 99%

Near infrared optical and photoelectric properties of Cu2O II. Near infrared Photoconductivity in Cu2O: Influence of annealing

Zouaghi¹

1972

Phys. Stat. Sol. (a)

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The near infrared photoresponse spectra of three classes of Cu2O samples have been investigated at 295, 110 and 10 K. At 295 K the spectra of the first class samples annealed in very high vacuum show two thresholds at 1.9 and ≈︁ 1.4 eV. Those of the second class of samples analogous to those investigated by Prevot et al. (Part I) show two more thresholds at 1.65 and ≈︁ 0.9 eV. For the samples of the third class expected to have a high oxygen excess, two thresholds at 1.9 and 1.65 eV and a diffuse one located near 0.55 eV, have been observed. At low and very low temperatures, more structures have been observed on samples of the second and third classes. In addition to one photoresponse minimum at 1.9 eV that shifts with temperature, two more minima at 0.97 eV and 0.76 eV corresponding to absorption maxima have been found. Further weaker structures have been observed at 1.19, 1.11, 1.05, and ≈︁ 0.9 eV. In Part III of this work the interpretation of the experimental results will be presented in connection with the absorption data of Part I.

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Section: Growth Of the Cu20 Samplesmentioning

confidence: 99%