Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and p-i-n diode models

Accurate Analytical Modeling for Switching Energy of PiN Diodes Reverse Recovery

“…As can be seen in Figure 8, the peak reverse recovery current has a positive temperature coefficient whereas the peak diode voltage overshoot has a negative temperature coefficient. The peak diode voltage overshoot dependence on temperature is used to parameterize equation (9) whereas the temperature dependence of the peak reverse current is used to parameterize equation (10). …”

“…The SPICE sub-circuit models for reverse recovery behavior of PiN diodes are mainly physics-based and hence, depend on device parameters. The physics of PiN diodes are described in [3]- [9] whereas some of the SPICE models are provided in [10]- [16]. SPICE models are accurate in modelling PiN diodes, although prior knowledge of all device parameters is required which may be hindered by the fact that some of them are not on the manufacturers' datasheet.…”

Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence

“…The device parameters were estimated from datasheet values using the procedures in [30]. The transfer characteristics were obtained using a Tektronix 371B curve tracer with the device placed in an environmental chamber to control the temperature.…”

Parameter Identification of Power Semiconductor Device Models Using Metaheuristics

“…Manual parameter identification is still a hard task and some effort is necessary to match experimental and simulated results. A promising approach is to combine standard extraction methods to get an initial satisfying guess and then use numerical parameter optimization to extract the optimum parameter set (Allard et al, 2003;Bryant et al, 2006;Chibante et al, 2009b). Optimization is carried out by comparing simulated and experimental results from which an error value results.…”