Accurate Analytical Modeling for Switching Energy of PiN Diodes Reverse Recovery

Jahdi, Saeed; Alatise, Olayiwola; Li, Ran; Mawby, P.A.

doi:10.1109/tie.2014.2347936

Cited by 38 publications

(11 citation statements)

References 29 publications

(17 reference statements)

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“…As the diode becomes reverse biased, the depletion-layer's charge is injected into the system as the reverse-recovery current, and causes loss in both the diode and switch. The reverse-recovery current, shown in Figure 8, is approximated as a triangular function characterized by the peak reverse-recovery current, I rr , and the reverse-recovery time segments, T a and T b , which sum to the total reverse-recovery time T rr [33][34][35]. The diode's reverse-recovery transient is also determined by its forward current, I F , prior to switching, and the slope of its switching current, dI D dt , where…”

Section: Reverse Recovery Lossmentioning

confidence: 99%

A Comprehensive Loss Model and Comparison of AC and DC Boost Converters

et al. 2021

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DC microgrids have become a prevalent topic in research in part due to the expected superior efficiency of DC/DC converters compared to their AC/DC counterparts. Although numerous side-by-side analyses have quantified the efficiency benefits of DC power distribution, these studies all modeled converter loss based on product data that varied in component quality and operating voltage. To establish a fair efficiency comparison, this work derives a formulaic loss model of a DC/DC and an AC/DC PFC boost converter. These converters are modeled with identical components and an equivalent input and output voltage. Simulated designs with real components show AC/DC boost converters between 100 W to 500 W having up to 2.5 times more loss than DC/DC boost converters. Although boost converters represent a fraction of electronics in buildings, these loss models can eventually work toward establishing a comprehensive model-based full-building analysis.

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Section: Reverse Recovery Lossmentioning

confidence: 99%

A Comprehensive Loss Model and Comparison of AC and DC Boost Converters

et al. 2021

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“…Unlike conventional PN diodes, The PIN diode adds a thin layer of low-doped intrinsic material between the positive pole and the negative pole. The I-layer can reduce the interstage capacitance of the diode and increase the breakdown voltage [35].…”

Section: Design Of the Pin Switchmentioning

confidence: 99%

Design of a RF Switch Used in Redundant Atomic Clock Configurations

Hou

Wang

Tang

et al. 2019

Sensors

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Atomic clocks provide frequency reference signals for communication, aerospace, satellite navigation and other systems. The redundant configuration of atomic clocks is necessary for ensuring the continuity and stability of the system. A radio frequency (RF) switch is usually used as a switching device in the switching system of the host atomic clock and the backup atomic clock. When the atomic clock fails, the switching between the host and the backup clock can be carried out quickly. Aiming at the fast switching requirements of atomic clock RF signals, this paper proposes a new series-shunt Positive Intrinsic Negative (PIN) switch design. In this paper, the evaluation of the RF switches is conducted by using the metrics of switching speed, insertion loss, isolation, return loss at on state and return loss at off state. Experimental result shows that the new PIN switch has better and more comprehensive performance metrics than the electromechanical switch, FET switch and conventional PIN switch. In particular, the switching speed is 53 ns faster than the conventional series-shunt PIN switch.

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“…The switching energy is comprised of 6 areas with algebraic functions that can easily be integrated in time. The time intervals are expressed in terms of the switching parameters of the device [10]. The equation for the switching energy of the Schottky diode is shown below:…”

Section: A Pin Diodementioning

confidence: 99%

“…Where the coefficients in equation (3) and the temperature dependency of the PiN diodes parameters are given in [10] Fig. 3.…”

Section: A Pin Diodementioning

confidence: 99%

Electrothermal modeling and characterization of SiC Schottky and silicon PiN diodes switching transients

Jahdi

Alatise

Alexakis

et al. 2014

2014 IEEE Energy Conversion Congress and Exposition (ECCE)

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Schottky diodes are known to have lower conduction and switching losses compared to PiN diodes, however, are prone to ringing in the output characteristics. In this paper, analytical models have been developed to calculate the turn-off switching energy of SiC Schottky and silicon PiN diodes. The models account for the reverse recovery current and diode voltage overshoot in the case of the PiN diode as well as the output oscillations for the Schottky diodes. PiN diodes during turn-off exhibit significant reverse current which increases with the switching rate and temperature whereas Schottky diodes exhibit output oscillations due to RLC resonance in the circuit. By combining these models with thermal networks derived from transient thermal impedance curves of the diodes, a fast and accurate method of predicting the temperature transient for different switching frequencies and electrical time constants has been developed. These models can be used by application engineers to predict the energy dissipation when designing converters and can take account of temperature and switching rate dependencies of the diodes.

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Accurate Analytical Modeling for Switching Energy of PiN Diodes Reverse Recovery

Cited by 38 publications

References 29 publications

A Comprehensive Loss Model and Comparison of AC and DC Boost Converters

A Comprehensive Loss Model and Comparison of AC and DC Boost Converters

Design of a RF Switch Used in Redundant Atomic Clock Configurations

Electrothermal modeling and characterization of SiC Schottky and silicon PiN diodes switching transients

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