Two gates are better than one [double-gate MOSFET process]

Solomon, P. M.; Guarini, K.W.; Zhang, Y.; Chan, K.; Jones, E.C.; Cohen, Guy; Krasnoperova, Azalia A.; Ronay, Maria; Dokumaci, O.; Hovel, H. J.; Bucchignano, J.; Cabral, C.; Lavoie, C.; Ku, V.; Boyd, D.; Petrarca, K.; Yoon, Jung Ho; Babich, I.; Treichler, J.; Kozlowski, P.; Newbury, J.; D'Emic, C.; Sicina, R.M.; Benedict, J.; Wong, H.-S. Philip

doi:10.1109/mcd.2003.1175108

Cited by 70 publications

(10 citation statements)

References 30 publications

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“…The Electro -static Ethics quotient of a bulk devices can be calculated using the Battery New methodology, which can really be described thus: Both valves of a double-gate mechanism are linked together. The electrical charge traces from the app's gate and source cease on the bottom positive terminal [10,11], preventing them from reaching the channel region Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

Study of finfet transistor: critical and literature review in finfet transistor in the active filter

Mohammede¹,

Mahmood²,

Demirel³

2023

3C TIC

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For several decades, the development of metal-oxide-semiconductor field-effect transistors have made available to us better circuit time and efficiency per function with each successive generation of CMOS technology. However, basic product and manufacturing technology limitations will make continuing transistor scaling difficult in the sub-32 nm zone. Field impact transistors with fins were developed. offered as a viable solution to the scalability difficulties. Fin field effect transistors can be made in the same way as regular CMOS transistors, allowing for a quick transition to production. The use of inserted-oxide FinFET technology was presented as a solution to continue transistor scaling. Due to gate fringing electric fields through the added oxide (SiO2) layers, the electromagnetic integrity of an iFinFET is superior to that of a FinFET. We discovered that the proposed mobility model functions admirably and that the Joule effect mostly influences the drain current and the heat source. The major goal of this work is to compare the performance characteristics of combinational logic using CMOS and FinFET technology. The inverting gate is modelled in HSPICE simulation on a 32nm transistor size utilising CMOS and FinFET structures, and respective performances, such as energy consumed, are examined.

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Section: Introductionmentioning

confidence: 99%

Study of finfet transistor: critical and literature review in finfet transistor in the active filter

Mohammede¹,

Mahmood²,

Demirel³

2023

3C TIC

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“…[11,12]. Researchers have shown that different dielectric MOSFET design is more appealing than standard MOSFET architecture up to 100 nm technology node in recent decade due to higher ON current, enhanced transconductance (gm), subthreshold slope (SS), and superior SECs [13][14][15][16][17][18][19]. Since different dielectric MOSFETs demonstrate signi cant SCE for channel lengths of less than 100 nm, several solutions, such as gate/channel/oxide engineering, are being researched to improve its performance [20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Influence of Device Performance of Sub-15 nm high K dielectric-based MOSFETs over Conventional Si-based MOSFETs.

Singh

Baghel

Tirkey

2022

Preprint

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A channel-engineered single insulator gate metal oxide field effect transistor (MOSFET) for low-power digital circuitry has been proposed in this study. This study examines the effects of several dielectric insulators used as gate materials, silicon dioxide (SiO2), silicon nitride (Si3N4), hafnium dioxide (HfO2), and zirconium dioxide (ZrO2). The device's performance parameters are enhanced by utilizing different dielectrics in MOSFETs as a gate dielectric since the leakage current is significantly decreased. Following the validation of simulation findings using MOSFET reference data, the structure is evaluated by 15nm and 20nm node technology. In particular 15 nm scale, MOSFET exhibits reduced IOFF, higher ION/IOFF ratio, enhanced Drain Induced Barrier Lowering (DIBL), and Sub-threshold Slope (SS). For proposed MOSFETs, the simulated values of ION, IOFF, ION/IOFF, SS, DIBL, TGF, output conductance (gd), intrinsic gain (Av), and early voltage (VEA) shows improvements which are helpful in digital logic applications.

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“…[7][8][9][10][11][12][13][14][15] One of the predominant anticipated solutions in the nanoscale regime to inhibit these SCEs is DG-MOSFET. [16] However to cope with the device downscaling and quashing the SCEs, there arises the need to allow some relatively thicker gate oxide along with high-k effectuation to exert the electrostatic integrity of the DG MOSFET device. [7,15] Due to this progression, DG-MOSFET is anticipated to be further investigated to subdue the SCEs.…”

Section: Introductionmentioning

confidence: 99%

A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET

Tripathi¹

2016

Chinese Phys. B

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In the present work, a two-dimensional (2D) analytical framework of triple material symmetrical gate stack (TMGS) DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along with triple material gate having different work functions and symmetrical gate stack structure, showcases substantial betterment in quashing short channel effects to a good extent. The device functioning amends in terms of improved exemption to threshold voltage roll-off, thereby suppressing the short channel effects. The encroachments of respective device arguments on the threshold voltage of the proposed structure are examined in detail. The significant outcomes are compared with the numerical simulation data obtained by using 2D ATLAS TM device simulator to affirm and formalize the proposed device structure.

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Two gates are better than one [double-gate MOSFET process]

Cited by 70 publications

References 30 publications

Study of finfet transistor: critical and literature review in finfet transistor in the active filter

Study of finfet transistor: critical and literature review in finfet transistor in the active filter

Influence of Device Performance of Sub-15 nm high K dielectric-based MOSFETs over Conventional Si-based MOSFETs.

A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET

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