Two-dimensional simulation and measurement of high-performance MOSFETs made on a very thin SOI film

A SiGe on insulator MOSFET to improve the electrical performances: Amended channel band energy

“…At the same time, silicon on insulator (SOI) substrate demonstrate a number of merits for the VLSI designer such as reduced parasitic capacitance, and resistance to radiation [13]. Nevertheless the SOI technology has some disadvantages, the main of them is self-heating.…”

Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's

“…suggested by several authors as an attractive future VLSI technology [1]- [3] due to the advantages that SOI devices show when compared to their conventional silicon counterparts, in particular with respect to radiation tolerance, lower parasitic capacitance and short channel effects [2]. These advantages indicate a tremendous potential for extremely thin SOI devices and promise a very encouraging future for both SOI and VLSI technologies.…”

Prevention of Single Event Upsets in Microelectronics

“…While it is true that the parasitic bipolar is not significant for modeling normal device operation, it becomes a major factor in modeling single-event effects as "ill be discussed in the following subsections. In addition, even for modeling normal operating conditions, the models appear complex both numerically [46][47][48] and computationally [49][50][51][52][53] or are limited in device structures or range of operating conditions [54][55][56][57]. More recent characterization and modeling efforts have concentrated on the optimization of device designs and the effects of scaling the SOI devices to smaller device sizes and thinner active layers [58][59][60][61], but again the concentration is on normal device operation or post irradiation operation (for example, increases in leakage currents and shifts in threshold voltages [43,60] CMOS-SOI devices are distinguished from bulk MOS devices by a decreased charge collection volume reducing the direct perturbation of the device during the penetration of an ion (single event).…”