Two-dimensional electron transport in semiconductor layers. I. Phonon scattering

Universality of electron mobility curves in MOSFETs: a Monte Carlo study

“…Phonon scattering mainly causes one of two types of electron transitions: (a) intravalley acoustic transitions and (b) intervalley transitions, both of which have been adapted from their treatment in silicon bulk for use in Si( 100) inversion layers. The phonon-scattering rates have been deduced by using Price's formulation [27]. The intervalley transitions are described both via zero-order coupling in Jacoboni's bulk phonon-model [ 161.…”

The Intersubband Approach to Si-based Lasers

“…We will proceed with the following approximations: 1) all phonons are treated to be bulk-like by neglecting the phonon confinement effect in QW structures, 2) energies of acoustic phonons are negligible , and 3) optical phonon energies are taken as a constant . The matrix element of carrier-phonon interaction for different type of phonons can be written as [39,40] where the upper sign is for absorption and lower for emission of one phonon, is the Boltzmann constant, is the volume of the lattice mode cavity, is the elastic constant for acoustic mode, and are the acoustic and optical deformation potential, respectively, and is the number of optical phonons at temperature , But for valence subbands where there is a strong nonparabolicity, Eq. (32) can no longer be integrated analytically.…”

Effects of the inversion-layer centroid on the performance of double-gate MOSFETs

“…Although the linearly-extrapolated threshold voltage might not be the best choice, we use (9) here just for the purpose of a fair comparison with conventional bulk MOSFET's. If we write (10) then at the strong-inversion limit can be interpreted as the linearly-extrapolated threshold voltage. Factor 2 multiplying takes into account the fact that we have two channels.…”

“…The lower channel length can also provide transport advantages if it translates into noticeable velocity overshoot. Nevertheless, the electron confinement also causes some disadvantages: 1) the low thermal-conductivity of the silicon dioxide can produce selfheating along the channel, thus increasing phonon scattering [9]; 2) the parasitic series resistance increases; 3) the very confinement of the electrons in the spatial coordinate leads to a lower localization in momentum space and, therefore, increased phonon scattering [10]- [12].…”