Two-Dimensional Anderson Localization in Black PhosphorusCrystals Prepared by Bismuth-Flux Method

Baba, Mamoru; Izumida, Fukunori; Takeda, Yuji; Shibata, Kiyotaka; Morita, Akira; Koike, Yasuhiro; Fukase, T.

doi:10.1143/jpsj.60.3777

Cited by 18 publications

(12 citation statements)

References 9 publications

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“…It can be seen that the temperature dependence of the electrical conductivity of sample 3 is linear in the logarithmic scale, which is characteristic of the regime of weak localization in the two-dimensional case. The results obtained are in agreement with the literature data published previously where two-dimensional contribution to the conductivity is observed in the weak localization regime [21]. As is known, weak localization is detected by its destruction in a magnetic field due to a gradual decrease in the interference correction to the resistivity.…”

Section: Journal Of Modern Trends In Physics Researchsupporting

confidence: 93%

Two-dimensional system - black phosphorus: electronic, atomic structure and transport properties of bP(100) single crystals

Abdelsalam¹,

Zagitova²,

Bozhko³

et al. 2019

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The electronic, atomic structure and transport properties of black phosphorus (bP) single crystals prepared by high-pressure methods and a gas-transport reaction were studied by X-ray photoelectron spectroscopy (XPS) and scanning probe microscopy (STM, AFM). After exposure of the clean surface under atmospheric conditions, the features in the XPS spectra corresponding to the oxidized form of phosphorus were observed. The appearance of oxidized areas on the surface was also detected using AFM. The atomic resolution of the surface of a single crystal was obtained by the STM method. As a result of low-temperature transport measurements, impurity activation energies were determined, and negative magnetoresistance along the Y direction was detected. 1. INTRODUCTION Recently, in condensed-matter physics, greater attention has been paid to systems with reduced dimensionality. Two-dimensional materials, quantum threads, quantum dots, as well as various hybrid structures based on them, attract the attention of scientists for the reason that their properties often differ from those of a bulk material. Among twodimensional materials, graphene, dichalcogenides of transition metals, hexagonal boron nitride, and monoatomic layers of Si, Ge, Sn have also been extensively studied. 2D materials are thin sheets of atomic thickness that exhibit exotic physical and mechanical properties with promising potential for technological applications and fundamental science. So far, most conventional 2D materials have been derived from a limited set of bulk solids consisting of stacked, weakly bound sheets (graphite, MoS2, hexagonal boron nitride, and black phosphorus). The simplest examples exist in elemental 2D materials, of which two are known to also occur in a bulk layered form: graphite (graphene) and 2D black phosphorus (phosphorene). Phosphorus demonstrates multiple bulk allotropes such as highly reactive white phosphorus, red phosphorus and purple phosphorus, and relatively inert black phosphorus. 2D phosphorus, or phosphorene, is among the few 2D materials isolated directly from a bulk solid, specifically from black phosphorus. Black phosphorus exhibits an orthorhombic crystal structure composed of stacked, weakly bound layers. However, these layers are buckled out of the plane to form corrugated rows, resulting in significant anisotropy in mechanical strength, electrical and thermal conductivity, and optical properties. As a promising two-dimensional material, black phosphorus was also proposed which is the allotropic modification of phosphorus most stable under normal conditions [1, 2, 3]. Black phosphorus is a layered material where atomic layers are held by weak van der Waals forces. Atomic layers of bP have a "corrugated" structure, and are not flat, as, for example, in graphene. The lattice belongs to orthorhombic syngony, pr. Cmca, a = 4.37, b = 3.31, c = 10.47 Å. The distance between the layers is 5.3 Å. In the black phosphorus

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Section: Journal Of Modern Trends In Physics Researchsupporting

confidence: 93%

Two-dimensional system - black phosphorus: electronic, atomic structure and transport properties of bP(100) single crystals

Abdelsalam¹,

Zagitova²,

Bozhko³

et al. 2019

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“…Figure 2(a) shows ρ xx at T = 2, 15, and 30 K as a function of the magnetic field that is applied parallel to the b-axis. ρ xx first decreases below 2 T and then increases as the magnetic field increases at 2 K; it then monotonically increases with the magnetic field at 15 and 30 K. Negative magnetoresistance below 2 T at 2 K is ascribed to the suppression of the two-dimensional Anderson localization [16,17]. Figure 2(b) shows ρ yx at 2, 15, and 30 K.…”

Section: Resultsmentioning

confidence: 95%

“…In the middle-temperature region between 200 and 50 K, the reduction of ρ c as the temperature decreases can be interpreted as an enhancement in the mobility caused by the suppression of lattice vibrations in this temperature region. The steep increase in resistivity below 50 K can be attributed to both the suppression of thermally excited carriers from the impurity levels and Anderson localization [16]. Enhancements of ρ c below 50 K and above 200 K are suppressed as the pressure increases, and the temperature dependence becomes metallic across the entire temperature range above 1.38 GPa.…”

Section: Methodsmentioning

confidence: 99%

Two-carrier analyses of the transport properties of black phosphorus under pressure

et al. 2017

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We report on the electronic transport properties of black phosphorus and analyze them using a two-carrier model in a wide range of pressure up to 2.5 GPa. In semiconducting state at 0.29 GPa, the remarkable non-linear behavior in the Hall resistance is reasonably reproduced by assuming the coexistence of two kinds of hole with different densities and mobilities. On the other hand, twocarrier analyses of the magnetotransport properties above 1.01 GPa suggest the coexistence of high mobility electron and hole carriers that have almost the same densities, i.e., nearly compensated semimetallic nature of black phosphorus. In the semimetallic state, analyses of both the twocarrier model and quantum oscillations indicate a systematic increase in the carrier densities as pressure increases. An observed sign inversion of Hall resistivity at low magnetic fields suggests the existence of high mobility electrons (∼10 5 cm 2 V −1 s −1 ) that is roughly ten times larger than that of holes, in the semimetallic black phosphorus. We conclude that the extremely large positive magnetoresistance that has been observed in semimetallic state cannot be reproduced by a conventional two-carrier model.

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“…83 Recrystallization (bismuth flux method) Melted bismuth was first poured onto WP, then the mixed solution was heated to 400°C and kept for 20 h. After slowly cooling down, BP single crystals were obtained with n-type conduction under 7 K and 20 K having Hall mobility of 2 × 10 4 cm 2 /V s. 84 BP crystal preparation (needle shape) is obtained from a WP solution in a liquid bismuth bath under a vacuum. 85 In the early twenty-first century, BP was prepared using the addition of a small amount of gold (Au), tin (Sn), and tin iodide under low pressure. This new preparation method is a straightforward, toxic-free, and effective way to produce a large amount of BP crystals.…”

Section: Black Phosphorous Synthesismentioning

confidence: 99%

Recent Developments in Black Phosphorous Transistors: A Review

Pon

Bhattacharyya

Rathinam

2021

J. Electron. Mater.

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Two-dimensional (2D) materials like graphene, phosphorene, germanene, silicene, and transition metal dichalcogenides have attracted intense research attention because of their rich physics and potential for integration into next-generation electronic devices. These materials offer superior electrostatic control to their bulk counterparts, which makes them fascinating for device fabrication. After graphene and MoS 2 , the most intensively explored 2D material is black phosphorus (BP). During the past half-decade, BP has notably achieved excellent performance when included in transistors. This review paper aims to throw some light on BP properties and their performance in a field effect transistor device. The state-of-the-art BP transistors are reviewed, and a balanced view of both the benefits and drawbacks is provided. Keywords 2D material • black phosphorous • phosphorene • TCAD • DFT • MOSFET • TFET* Ramesh Rathinam

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Two-Dimensional Anderson Localization in Black PhosphorusCrystals Prepared by Bismuth-Flux Method

Cited by 18 publications

References 9 publications

Two-dimensional system - black phosphorus: electronic, atomic structure and transport properties of bP(100) single crystals

Two-dimensional system - black phosphorus: electronic, atomic structure and transport properties of bP(100) single crystals

Two-carrier analyses of the transport properties of black phosphorus under pressure

Recent Developments in Black Phosphorous Transistors: A Review

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