Manipulating topological spin textures is a key for exploring unprecedented emergent electromagnetic phenomena. Whereas switching control of magnetic skyrmions, e.g., the transitions between a skyrmion-lattice phase and conventional magnetic orders, is intensively studied towards development of future memory device concepts, transitions among spin textures with different topological orders remain largely unexplored. Here we develop a series of chiral magnets MnSi 1− x Ge x , serving as a platform for transitions among skyrmion- and hedgehog-lattice states. By neutron scattering, Lorentz transmission electron microscopy and high-field transport measurements, we observe three different topological spin textures with variation of the lattice constant controlled by Si/Ge substitution: two-dimensional skyrmion lattice in x = 0–0.25 and two distinct three-dimensional hedgehog lattices in x = 0.3–0.6 and x = 0.7–1. The emergence of various topological spin states in the chemical-pressure-controlled materials suggests a new route for direct manipulation of the spin-texture topology by facile mechanical methods.

A well known semiconductor Cd3As2 has reentered the spotlight due to its unique electronic structure and quantum transport phenomena as a topological Dirac semimetal. For elucidating and controlling its topological quantum state, high-quality Cd3As2 thin films have been highly desired. Here we report the development of an elaborate growth technique of high-crystallinity and high-mobility Cd3As2 films with controlled thicknesses and the observation of quantum Hall effect dependent on the film thickness. With decreasing the film thickness to 10 nm, the quantum Hall states exhibit variations such as a change in the spin degeneracy reflecting the Dirac dispersion with a large Fermi velocity. Details of the electronic structure including subband splitting and gap opening are identified from the quantum transport depending on the confinement thickness, suggesting the presence of a two-dimensional topological insulating phase. The demonstration of quantum Hall states in our high-quality Cd3As2 films paves a road to study quantum transport and device application in topological Dirac semimetal and its derivative phases.

Hydrodynamic flow of phonons, previously detected only in a handful of solids, is observed in black phosphorus.

The in-plane resistivity, Hall resistivity and magnetization of graphite were investigated in pulsed magnetic fields applied along the c-axis. The Hall resistivity approaches zero at around 53 T where the in-plane and out-of-plane resistivities steeply decrease. The differential magnetization also shows an anomaly at around this field with a similar amplitude compared to that of de Haas-van Alphen oscillations at lower fields. This transition field appears insensitive to disorder, but reduces with doping holes. These results suggest the realization of the quantum limit states above 53 T. As a plausible explanation for the observed gapped out-ofplane conduction above 53 T, the emergence of the excitonic BCS-like state in graphite is proposed.

Lifshitz transition, a change in Fermi surface topology, is likely to greatly influence exotic correlated phenomena in solids, such as high-temperature superconductivity and complex magnetism.However, since the observation of Fermi surfaces is generally difficult in the strongly correlated systems, a direct link between the Lifshitz transition and quantum phenomena has been elusive so far. Here, we report a marked impact of the pressure-induced Lifshitz transition on thermoelectric performance for SnSe, a promising thermoelectric material without strong electron correlation. By applying pressure up to 1.6 GPa, we have observed a large enhancement of thermoelectric power factor by more than 100% over a wide temperature range (10-300 K). Furthermore, the high carrier mobility enables the detection of quantum oscillations of resistivity, revealing the emergence of new Fermi pockets at ∼0.86 GPa. The observed thermoelectric properties linked to the multi-valley band structure are quantitatively reproduced by first-principles calculations, providing novel insight into designing the SnSe-related materials for potential valleytronic as well as thermoelectric applications.

Unconventional surface states protected by non-trivial bulk orders are sources of various exotic quantum transport in topological materials. One prominent example is the unique magnetic orbit, so-called Weyl orbit, in topological semimetals where two spatially separated surface Fermi-arcs are interconnected across the bulk. The recent observation of quantum Hall states in Dirac semimetal Cd 3 As 2 bulks have drawn attention to the novel quantization phenomena possibly evolving from the Weyl orbit. Here we report surface quantum oscillation and its evolution into quantum Hall states in Cd 3 As 2 thin film samples, where bulk dimensionality, Fermi energy, and band topology are systematically controlled. We reveal essential involvement of bulk states in the quantized surface transport and the resultant quantum Hall degeneracy depending on the bulk occupation. Our demonstration of surface transport controlled in film samples also paves a way for engineering Fermi-arc-mediated transport in topological semimetals.

The atropisomeric enantiomers of 7-, 8-, and 9-membered-ring dibenzolactams were separated by using chiral HPLC, and their stereochemistries were clarified by using X-ray crystallographic analysis. The atropisomers showed high stereochemical stability with the 8-membered ring being the most stable. In 7- and 8-membered dibenzolactams, highly stereoselective C7-methylation proceeded from the lower side of the ring to provide the products with a C7-methyl group in the pseudoaxial orientation, which converted to thermodynamically more stable isomers with the pseudoequatorial C7-methyl group. In 9-membered dibenzolactam, C7-methylation occurred from the opposite (upper) side of the ring to provide a thermodynamically stable product with the pseudoequatorial C7-methyl group.

We report spin-split Landau levels of quasi-two-dimensional Dirac fermions in a layered antiferromagnet EuMnBi 2 , as revealed by interlayer resistivity measurements in a tilted magnetic field up to ∼35 T. The amplitude of Shubnikov-de Haas (SdH) oscillation in interlayer resistivity is strongly modulated by changing the tilt angle of the field, i.e., the Zeeman-to-cyclotron energy ratio. The effective g factor estimated from the tilt angle, where the SdH oscillation exhibits a phase inversion, differs by approximately 50% between two antiferromagnetic phases. This observation signifies a marked impact of the magnetic order of Eu sublattice on the Dirac-like band structure.The origin may be sought in strong exchange coupling with the local Eu moments, as verified by the first-principles calculation.