Tunneling Injection of Electrons at Nanometer-Scale Schottky Gate Edge of AlGaN/GaN Heterostructure Transistors and Its Computer Simulation

Kotani, Junji; Kasai, Seiya; Hasegawa, Hideki; Hashizume, Tamotsu

doi:10.1380/ejssnt.2005.433

Cited by 5 publications

(4 citation statements)

References 14 publications

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“…It should be remembered that the measurements for these two devices are performed under identical operating conditions. These results are in keeping with those presented [26].…”

Section: Extracti On Of the Model Parameterssupporting

confidence: 93%

Gate Leakage Current in GaN HEMT’s: A Degradation Modeling Approach

Mimouni¹,

Fernández²,

Rodriguez‐Tellez³

et al. 2013

EEE

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In this paper we p resent an empirical preliminary model able to simulate the degradation with t ime in the gate leakage current in GaN HEMT devices. The model is based on extensive reverse and forward current measurements, carried out on a wide range of different device designs and under different bias, performed over aged transistors by III-V Lab (Alcatel-Thales) within the European KORRIGA N. A closed form expression for the reverse gate current, depending on time, as well as the expression parameters extraction procedure are presented. The experimental and simulated results presented illustrate the validity of the model as well as it's usefulness in reliability studies.

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“…It should be remembered that the measurements for these two devices are performed under identical operating conditions. These results are in keeping with those presented [26].…”

Section: Extracti On Of the Model Parameterssupporting

confidence: 93%

Gate Leakage Current in GaN HEMT’s: A Degradation Modeling Approach

Mimouni¹,

Fernández²,

Rodriguez‐Tellez³

et al. 2013

EEE

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“…The detailed discussion about the lateral tunneling current has been published elsewhere. 20,27 Briefly, if highdensity oxygen impurities exist in the surface layer, they induce concentration of electric field lines in the lateral direction along the AlGaN surface, and this causes large leakage currents in the low bias region due to the lateral tunneling injection of electrons. On the other hand, the vertical tunneling leakage current usually becomes dominant in high bias region.…”

Section: E Application Of Surface Control To Algan / Gan Hfetmentioning

confidence: 99%

Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism

Kotani

Kaneko

Hasegawa

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Leakage currents in AlGaN Schottky diodes were investigated systematically by using a rigorous computer simulation based on the thin surface barrier model taking account of unintentionally doped surface donors. The leakage currents in AlGaN Schottky diodes have stronger bias dependence and smaller temperature dependences as compared with those of GaN diodes. It was shown that these features were associated with shallow oxygen donors located near the AlGaN surface. Then, an attempt was made to remove oxygen and suppress leakage currents by a surface control process using an ultrathin Al layer and subsequent annealing. An in situ x-ray photoelectron spectroscopy analysis indicated the formation of Al 2 O 3 layer during the surface control process, suggesting efficient gettering of oxygen from the surface. C-V analysis directly indicated the reduction of shallow donors by the surface control process. A remarkable reduction of reverse leakage currents of four to five orders of magnitude took place in large area AlGaN Schottky diodes after the application of the surface control process. This process also reduced leakage currents of the gate of the heterostructure field effect transistor device by more than one order of magnitude and increased temperature dependences of current.

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“…8) Instead, Kotani et al 8,9) applied the thin surface barrier (TSB) model 10) which assumes that the width of the Schottky barrier is reduced due to the presence of unintentional surface defect donors. When they analyzed I R of Al 0:26 Ga 0:74 N SBDs on sapphire (0001) substrates, 9) they took into account two surface donors: (1) nitrogen-vacancy (V N ) deep donors (energy depth 0.37 eV 11) for Al 0:26 Ga 0:74 N; 0.25 eV 12) for GaN) and (2) oxygen shallow donors (energy depth 0.03 eV 13,14) for Al 0:26 Ga 0:74 N only).…”

mentioning

confidence: 99%

Analysis of Leakage Current at Pd/AlGaN Schottky Barriers Formed on GaN Free-Standing Substrates

Mochizuki

Terano

Kaneda

et al. 2011

Appl. Phys. Express

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Analytical solutions based on the thin surface barrier (TSB) model were utilized to reproduce the measured current–voltage characteristics of Pd/unintentionally doped Al0.08Ga0.92N/compositionally graded AlGaN/n-GaN Schottky barrier diodes (SBDs) formed on GaN free-standing substrates. The TSB thickness (D) and the Schottky barrier height were used as fitting parameters, while the measured surface concentration of shallow donors was used as a constant. Since the resultant D was close to the value determined from the oxygen concentration profiles, the surface oxygen was concluded to be deeply-involved in the TSB formation.

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Tunneling Injection of Electrons at Nanometer-Scale Schottky Gate Edge of AlGaN/GaN Heterostructure Transistors and Its Computer Simulation

Cited by 5 publications

References 14 publications

Gate Leakage Current in GaN HEMT’s: A Degradation Modeling Approach

Gate Leakage Current in GaN HEMT’s: A Degradation Modeling Approach

Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism

Analysis of Leakage Current at Pd/AlGaN Schottky Barriers Formed on GaN Free-Standing Substrates

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