Triple high k stacks (AI/sub 2/O/sub 3//HfO/sub 2//AI/sub 2/O/sub 3/) with high pressure (10atm) H/sub 2/and D/sub 2/ annealing for SONOS type flash memory device applications

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Triple high k stacks (AI/sub 2/O/sub 3//HfO/sub 2//AI/sub 2/O/sub 3/) with high pressure (10atm) H/sub 2/and D/sub 2/ annealing for SONOS type flash memory device applications

Cited by 3 publications

References 3 publications

Charge retention improvement of charge-trapping type flash device by plasma immersion ion implantation

Charge retention improvement of charge-trapping type flash device by plasma immersion ion implantation

Electrical characterization of metal-oxide-high-k dielectric-oxide-semiconductor (MOHOS) structures for memory applications

Metal–Oxide–High-$\kappa$ Dielectric–Oxide–Semiconductor (MOHOS) Capacitors and Field-Effect Transistors for Memory Applications

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