Metal-oxide-semiconductor capacitors that incorporate La2O3 dielectric films were deposited by radio frequency magnetron sputtering. In this work, the essential structures and electrical properties of La2O3 thin films were investigated. Capacitance–voltage, energy dispersive x-ray spectrometry, and transmission electron microscopy analyses reveal that an interfacial layer was formed, subsequently reducing the effective dielectric constant of the 700°C annealed La2O3 thin films. The dominant conduction mechanism of the Al∕La2O3∕p-Si metal-lanthanum oxide-semiconductor capacitor is space-charge-limited current from 300to465K in the accumulation mode. Three different regions, Ohm’s law region, trap-filled-limited region, and Child’s law region, were observed in the current-density–voltage (J–V) characteristics at room temperature. The activation energy of traps calculated from the Arrhenius plots was about 0.21±0.01eV. The electronic mobility, trap density, dielectric relaxation time, and density of states in the conduction band were determined from the space-charge-limited conduction at room temperature.
The electrical conduction mechanism of (Ba 0.5 ,Sr 0.5)TiO 3 ͑BST͒ as a function of the temperature was studied. Au/BST/Pt metal-insulator-metal capacitors were fabricated. The temperature range was from 300 to 423 K. The conduction current depended on the voltage polarity. At high electrical field ͑Ͼ800 kV/cm͒ and with the Pt electrode biased negatively, the Pt/BST interface forms a Schottky barrier with a barrier height of 0.58 eV from 300 to 373 K. The Au/BST interface forms an ohmic contact. The conduction current when the Au electrode is biased negatively shows space-charge-limited-current behavior. An energy band diagram is proposed to explain the experimental results.
Articles you may be interested inElectrical properties of metal-ferroelectric ( Pb Zr 0.53 Ti 0.47 O 3 ) -polysilicon-insulator ( Y 2 O 3 ) -silicon capacitors and field-effect transistorsa) Fabrication and characterization of metal-ferroelectric ( PbZr 0.6 Ti 0.4 O 3 ) -insulator ( La 2 O 3 ) -semiconductor capacitors for nonvolatile memory applications The improvement of retention time of metal-ferroelectric ( Pb Zr 0.53 Ti 0.47 O 3 ) -insulator ( Zr O 2 ) -semiconductor transistors and capacitors by leakage current reduction using surface treatment Appl. Phys. Lett. 91, 192906 (2007); 10.1063/1.2807842 The effect of band offset on the retention properties of metal-ferroelectric ( Pb Zr 0.53 Ti 0.47 O 3 ) -insulator ( Dy 2 O 3 , Y 2 O 3 ) -semiconductor capacitors and field effect transistors Appl. Phys. Lett. 91, 122902 (2007); 10.1063/1.2784203 The charge trapping effect of metal-ferroelectric ( Pb Zr 0.53 Ti 0.47 O 3 ) -insulator ( Hf O 2 ) -silicon capacitors J. Appl. Phys. 98, 044103 (2005);
Articles you may be interested inInfluence of annealing temperature on electronic and dielectric properties of ZrO2 thin films on Si AIP Conf.Conduction mechanisms and reliability of thermal Ta 2 O 5 -Si structures and the effect of the gate electrode J. Appl. Phys. 97, 094104 (2005); 10.1063/1.1884758Interfaces between 4H-SiC and Si O 2 : Microstructure, nanochemistry, and near-interface traps Metal-oxide-semiconductor capacitors that incorporate ZrO 2 gate dielectrics were fabricated by radio frequency magnetron sputtering. In this work, the essential structures and electrical properties of ZrO 2 thin films were investigated. C-V, energy dispersive x-ray spectrometry, and transmission electron microscopy analyses reveal that an interfacial layer was formed, subsequently reducing the k value of the annealed ZrO 2 thin films. Additionally, the mechanisms of conduction of the Al/ ZrO 2 / p-Si metal/zirconium oxide/semiconductor structure were studied with reference to plots of standard Schottky emission, modified Schottky emission, and Poole-Frenkel emission. According to those results, the dominant mechanisms at high temperatures ͑Ͼ425 K͒ are Poole-Frenkel emission and Schottky emission in low electric fields ͑Ͻ0.6 MV/ cm͒ and high electric fields ͑ Ͼ1 MV/cm͒, respectively. Experimental results indicate that the Al/ ZrO 2 barrier height is 0.92 eV and the extracted trap level is about 1.1 eV from the conduction band of ZrO 2 . The modified Schottky emission can be applied in an electric field to ensure that the electronic mean free path of the insulator is less than its thickness. According to the modified Schottky emission model, the extracted electronic mobility of ZrO 2 thin films is around 13 cm 2 / V s at 475 K. The mean free path of transported electrons in ZrO 2 thin films is between 16.2 and 17.4 nm at high temperatures ͑425-ϳ 475 K͒.
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