Metal–Oxide–High-$\kappa$ Dielectric–Oxide–Semiconductor (MOHOS) Capacitors and Field-Effect Transistors for Memory Applications

Lanthanide Oxide Thin Films by Metalorganic Chemical Vapor Deposition Employing Volatile Guanidinate Precursors

“…They have received a lot of attention lately as alternative gate dielectrics because of their high dielectric constants [ k (Gd 2 O 3 ) = 16, k (Dy 2 O 3 ) = 14−18], large band gaps [ E g (Gd 2 O 3 ) = 5.6 eV; E g (Dy 2 O 3 ) = 4.9 eV] and high thermodynamic stability. − In addition, the close lattice match to Si offers the possible advantage to grow epitaxial films, which probably can eliminate problems related to grain boundaries in polycrystalline films. While thin films of Gd 2 O 3 have been projected as promising passivation layer for GaAs(100) surface, Dy 2 O 3 is an emerging material for replacing Si 3 N 4 in future metal-oxide-high- k -oxide-silicon (MOHOS) capacitors and as a capping layer on SiON in Ni-fully-silicide (FUSI) n -metal-oxide-semiconductor field-effect transistor (MOSFETs) . Further important applications in optics are enabled by their large band gaps, high refractive indices, and extended spectral transparency over ultraviolet (UV) to infrared (IR). , The thermodynamic stability and the refractory nature of these materials make them suitable as protective and corrosion resistive coatings. , In a broader sense, these materials are also components in superconducting and thermoelectric oxides, , as well as solid electrolytes for intermediate-temperature solid-oxide fuel cells (SOFCs). , …”

Vertical Silicon Nanowire Platform for Low Power Electronics and Clean Energy Applications

“…To overcome the scaling issues, the discrete charge trapped devices are being investigated widely. These devices use charge trapping materials such as silicon nitride, high-κ dielectric, and metal/silicon nanocrystals in place of conductive poly-Si floating gate and have simple fabrication process, lower programming voltage, and robust tolerances to defects in the thin tunnel oxide [35][36][37][38][39][40]. However, in discrete charge trap devices the gate dielectric thickness, for example, oxide-nitride-oxide (ONO) in case of silicon nitride as trap layer, is hard to scale due to the data retention concerns, and therefore it is difficult to avoid concomitant problems of severe short channel effects with scaling.…”

Charge-Trapping Devices Using Multilayered Dielectrics for Nonvolatile Memory Applications

“…To improve the retention time of SONOS devices, several researches have been reported. Hsu et al indicated that HfO 2 can replace Si 3 N 4 and obtain a higher conduction band offset for better retention [5]. Reports showed that the retention of memory devices can be improved using a chemical-vapor-deposited blocking oxide [6] or implementing a high-temperature deuterium annealing [7].…”