Trimming of hard-masks by gaseous Chemical Oxide Removal (COR) for sub-10 nm gates/fins, for gate length control and for embedded logic

Natzle, W.; Horak, D.; Deshpande, Sadanand V.; Yu, Christine; Liu, J.C.; Mann, R. W.; Doris, B.; Hanafi, H.I.; Brown, Jeffrey S.; Sekiguchi, A.; Tomoyasu, M.; Yamashita, Asao; Prager, Dan; Funk, Merritt; Cottrell, P.E.; Higuchi, F.; Takahashi, Hiroki; Sendelbach, Matthew; Solecky, Eric; Yan, Wendy; Tsou, L. Y.; Yang, Qingyun; Norum, J.; Iyer, S. Sundar Kumar

doi:10.1109/asmc.2004.1309536

Cited by 4 publications

(2 citation statements)

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“…The dHM process is also attractive as a less costly method than UV trimming 3 or chemical oxide removal. 2 With this process an ontrack wet trimming capability has been presented. The soluble hardmask has also enabled the imaging layer thickness to be less than one quarter of the exposure wavelength.…”

Section: Discussionmentioning

confidence: 99%

Wet trimming process for critical dimension reduction

Sun

Smith

Qin

2008

Advances in Resist Materials and Processing Technology XXV

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Plasma trimming is a method widely used to achieve small feature sizes beyond the capability of photolithography. Plasma processes reduce the dimensions of photoresist, anti-reflective coating, hardmask, or device substrate patterns with varying degrees of anisotropy. The vertical trim rate is higher than or equal to the lateral trim rate. As a result, much of the line-edge roughness from the resist pattern remains. High aspect-ratio resist patterns are subject to necking and collapse during this process. However, by using a developer-soluble hardmask in place of traditional anti-reflective layers, it is possible to achieve controllable, anisotropic trim rates, as well as reduced roughness. Moreover, the process benefits from a very thin resist, or imaging layer, instead of relying on a thicker mask with a high aspect-ratio. The hardmask is patterned during a standard resist develop step, and the resist may be stripped prior to substrate etching due to the high etch resistance of the hardmask. Many other advantages have been discovered from this wet trimming process, including high resolution, extended depth of focus, controllable trim rate, and lower cost than traditional methods.

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Section: Discussionmentioning

confidence: 99%

Wet trimming process for critical dimension reduction

Sun

Smith

Qin

2008

Advances in Resist Materials and Processing Technology XXV

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“…[18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33] These chemistries were commercialized in the semiconductor industry for use in precleaning technologies in film deposition, silicidation, and the fabrication of high-k dielectric metal gates. [29][30][31][32][33] Very recently, the thermal cyclic etching of SiN has also been realized. [34][35][36] In principle, a thin surface modified layer comprising (NH 4 ) 2 SiF 6 forms on the surface in a self-limiting manner to protect a material from etching by preventing for the further exposure to etchants and can be removed by thermal annealing.…”

Section: Advances In Atomic Layer Processing For Emerging Materialsmentioning

confidence: 99%

Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?

Ishikawa

Karahashi

Ichikı

et al. 2017

Jpn. J. Appl. Phys.

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In this review, we discuss the progress of emerging dry processes for nanoscale fabrication. Experts in the fields of plasma processing have contributed to addressing the increasingly challenging demands in achieving atomic-level control of material selectivity and physicochemical reactions involving ion bombardment. The discussion encompasses major challenges shared across the plasma science and technology community. Focus is placed on advances in the development of fabrication technologies for emerging materials, especially metallic and intermetallic compounds and multiferroic, and two-dimensional (2D) materials, as well as state-of-the-art techniques used in nanoscale semiconductor manufacturing with a brief summary of future challenges.

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