Tri-halide vapor phase epitaxy of thick GaN using gaseous GaCl3 precursor

Murakami, Hisashi; Takekawa, Nao; Shiono, Anna; Thieu, Quang Tu; Togashi, Rie; Kumagai, Yoshinao; Matsumoto, Koh; Koukitu, Akinori

doi:10.1016/j.jcrysgro.2016.08.029

Cited by 17 publications

(16 citation statements)

References 20 publications

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“…Thermodynamic analysis revealed that THVPE has a large driving force at growth temperatures even above 1100 °C, whereas the driving force of conventional HVPE falls around 1100 °C . To compare THVPE with HVPE, GaN crystals were grown experimentally in the same reactor using both HVPE and THVPE, employing equivalent flowrates and partial pressures of the gallium precursor at various growth temperatures . The experimental results were coincident with those of thermodynamic analysis.…”

Section: Introductionmentioning

confidence: 59%

“…Therefore, the growth mode shifted from 3D to 2D with increasing growth temperature. Migration of the precursor was considered to be promoted by increasing growth temperature …”

Section: Resultsmentioning

confidence: 99%

“…Herein, we propose a novel trihalide vapor‐phase epitaxy (THVPE) growth method using GaCl 3 as the Ga precursor . This method results in an enlarged crystal diameter because the GaN growth by THVPE is conducted along <000‐1>, which is the direction opposite to that in conventional HVPE, and the sidewall facet inclination occurs toward the periphery of the substrate as growth proceeds. Thermodynamic analysis revealed that THVPE has a large driving force at growth temperatures even above 1100 °C, whereas the driving force of conventional HVPE falls around 1100 °C .…”

Section: Introductionmentioning

confidence: 99%

“…This method results in an enlarged crystal diameter because the GaN growth by THVPE is conducted along <000‐1>, which is the direction opposite to that in conventional HVPE, and the sidewall facet inclination occurs toward the periphery of the substrate as growth proceeds. Thermodynamic analysis revealed that THVPE has a large driving force at growth temperatures even above 1100 °C, whereas the driving force of conventional HVPE falls around 1100 °C . To compare THVPE with HVPE, GaN crystals were grown experimentally in the same reactor using both HVPE and THVPE, employing equivalent flowrates and partial pressures of the gallium precursor at various growth temperatures .…”

Section: Introductionmentioning

confidence: 99%

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Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy

Yamaguchi¹,

Oozeki

Kawamoto

et al. 2020

Physica Status Solidi (b)

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Free‐standing gallium nitride (GaN) wafers are being increasingly used for high‐power and high‐frequency electronic devices. However, these have to be produced at low costs while maintaining high quality. With the aim of reducing the cost of manufacturing GaN substrates, trihalide vapor‐phase epitaxy (THVPE) is investigated to explore the effect of growth temperatures up to 1400 °C. High growth rate and high crystal quality are achieved simultaneously using THVPE. High‐quality GaN crystals are obtained at the growth rate of more than 300 μm h−1. Crystal characteristics are confirmed via the full width at half maximum (FWHM) of the (002) plane, obtained by the X‐ray two‐crystal (XRC) method. Dark spot density (DSD) measured via cathode luminescence decreases to the level of seed substrate at growth temperatures above 1300 °C. The yellow emission band is not visible in the photoluminescence spectra of the 2 in.‐diameter sample, which is consistent with very small concentrations of carbon impurities in the crystal. In addition to the attainment of high‐purity materials, parasitic polycrystal growth around the wafer and the reactor wall is eliminated, which can improve the productivity of the THVPE, due to very little down time of the reactor.

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Section: Introductionmentioning

confidence: 59%

“…Therefore, the growth mode shifted from 3D to 2D with increasing growth temperature. Migration of the precursor was considered to be promoted by increasing growth temperature …”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy

Yamaguchi¹,

Oozeki

Kawamoto

et al. 2020

Physica Status Solidi (b)

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“…The only commercially viable growth method suitable for the manufacture of bulk GaN substrates is hydride vapor phase epitaxy (HVPE) because of its relatively high growth rate, which can be 100 μm/h or faster . Trihalide vapor phase epitaxy (THVPE) using GaCl 3 instead of HVPE is an interesting alternative owing to its advantages including a high growth rate and superior crystal quality for growth temperature above 1200 °C . Comparison of thermochemical data showed that the equilibrium constant for THVPE increased with increasing growth temperature from 1000 to 1300 °C, whereas that for HVPE decreased .…”

Section: Introductionmentioning

confidence: 99%

Quasiequilibrium crystal shape and kinetic Wulff plot for GaN grown by trihalide vapor phase epitaxy using GaCl₃

Iso

Matsuda

Takekawa

et al. 2017

Physica Status Solidi (b)

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We demonstrated the selective‐area growth (SAG) of the nonpolar m‐plane true(10true1¯0true) and the polar −c‐plane (0001¯) substrates to determine the quasiequilibrium crystal shape (quasi‐ECS) by trihalide vapor phase epitaxy (THVPE). The results were compared with those by hydride vapor phase epitaxy (HVPE). The polar N‐face (0001¯) and the nonpolar m‐planes true{10true1¯0true} were consistently stable with the semipolar planes {101¯1¯} emerging only at high temperature for the quasi‐ECS grown by THVPE. The clear facets of the polar Ga‐face (0001) and Ga‐face sense semipolar planes such as true{10true1¯1true} did not appear. The kinetic Wulff plots for THVPE were constructed using the growth velocities for each emerging facet of the SAG. Bird's‐eye view SEM images of the selective‐area GaN crystals grown on the m‐plane and –c‐plane for THVPE.

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Hydride Vapor‐Phase Epitaxy Reactor for Bulk GaN Growth

Voronenkov

Bochkareva

Zubrilov

et al. 2019

Physica Status Solidi (a)

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An hydride vapor-phase epitaxy reactor for the growth of bulk GaN crystals with a diameter of 50 mm is developed. Growth rate nonuniformity of 1% is achieved using an axisymmetric vertical gas injector with stagnation point flow. Chemically resistant refractory materials are used instead of quartz in the reactor hot zone. High-capacity external gallium precursor sources are developed for the nonstop growth of the bulk GaN layers. A load-lock vacuum chamber and a dry in situ growth chamber cleaning are implemented to improve the growth process reproducibility. Freestanding GaN crystals with a diameter of 50 mm are grown with the reactor.

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Tri-halide vapor phase epitaxy of thick GaN using gaseous GaCl3 precursor

Cited by 17 publications

References 20 publications

Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy

Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy

Quasiequilibrium crystal shape and kinetic Wulff plot for GaN grown by trihalide vapor phase epitaxy using GaCl₃

Hydride Vapor‐Phase Epitaxy Reactor for Bulk GaN Growth

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Tri-halide vapor phase epitaxy of thick GaN using gaseous GaCl3 precursor

Cited by 17 publications

References 20 publications

Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy

Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy

Quasiequilibrium crystal shape and kinetic Wulff plot for GaN grown by trihalide vapor phase epitaxy using GaCl3

Hydride Vapor‐Phase Epitaxy Reactor for Bulk GaN Growth

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Product

Resources

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Quasiequilibrium crystal shape and kinetic Wulff plot for GaN grown by trihalide vapor phase epitaxy using GaCl₃