The surface potentials of n-dodecyltrimethylammoniopropanesulfonic acid (DDAPS) micelles in various electrolytes have been evaluated by capillary electrophoresis. This zwitterionic micelle has an inner cationic surface and an outer anionic surface and accommodates anions better than cations, indicating that a negative surface potential is induced by anion-dominated partition. Selectivity terms, i.e., solvation changes of ions and ion association between ions and charged groups in the DDAPS micelles, are introduced into the Poisson-Boltzmann equation for the spherical geometry. This model allows the interpretation of differences in the ionic partition and surface potential between electrolytes. The selectivity parameters have been determined by assuming agreement between the zeta potential determined by capillary electrophoresis and the calculated outer surface potential of the micelle. The obtained selectivity parameters can also explain the potentiometrically evaluated partition of ClO4and I -. It has been confirmed that capillary electrophoresis has wide applicability in surface potential measurements and can detect surface potentials of less than 1 mV. The selectivity origin in the partition into the DDAPS micelles is also discussed on the basis of evaluated parameters. The hydration changes mainly govern the uptake of well-hydrated anions, whereas poorly hydrated anions are partitioned into the micelle principally by ion-pair formation with the cationic groups in the micelles.
Improved nonpolar m-plane (1100) light emitting diode (LED) with a thick InGaN active layer of 8 nm and a thick GaN barrier layer of 37.5 nm for multi-quantum-well (MQW) structure have been fabricated on low extended defect bulk m-plane GaN substrates using metal organic chemical vapor deposition (MOCVD). The peak wavelength of the electroluminescence (EL) emission from the packaged LED was 468 nm. The output power and external quantum efficiency (EQE) were 8.9 mW and 16.8%, respectively, at a DC driving current of 20 mA.
Characteristics of m-plane InGaN/GaN light emitting diodes (LEDs) with various indium compositions were investigated. X-ray diffraction revealed that indium compositions in the InGaN multi quantum wells (MQWs) on m-plane substrate were 2 -3 times lower than those on c-plane substrate. The optical polarization ratio for m-plane LEDs increased from 0.27 to 0.89 with increasing emission wavelength from 383 to 476 nm due to compressively strained InGaN QWs. The output power of electroluminescence decreased above 400 nm although polarization-related internal electric fields were eliminated. #
We demonstrate continuous-wave (CW) operation of nonpolar m-plane InGaN/GaN laser diodes without Al-containing waveguide cladding layers. Thick InGaN quantum wells (QWs) are used to generate effective transverse optical mode confinement, eliminating the need for Al-containing waveguide cladding layers. Peak output powers of more than 25 mW are demonstrated with threshold current densities and voltages of 6.8 kA/cm 2 and 5.6 V, respectively. The unpackaged and uncoated laser diodes operated under CW conditions for more than 15 h.
Spontaneously polarized light emission from m-plane InGaN/GaN light-emitting diodes was studied as a function of In composition in the InGaN single quantum-well layer. Emission wavelength was varied between 394 and 472 nm. A strong correlation was confirmed between optical polarization and In composition; the higher the In composition, the stronger the optical polarization. The photon-energy difference between the emission spectra associated with the two polarizations, ΔM, was evaluated as a function of current. ΔM exhibited a negative monotonic current dependence for the 394 nm emitting sample and the dependence was changed to positive monotonic as the wavelength became longer towards 472 nm. This change was tentatively attributed to the valence band mixing and the crystal momentum conservation that became relevant with the band filling. ΔM and optical polarization exhibited only a moderate correlation; the Fermi–Dirac function has been used to explain the weakened optical polarization under increased current injection.
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