Homoepitaxial tri-halide vapor-phase epitaxy (THVPE) growth on polar, semipolar, and nonpolar bulk GaN substrates was demonstrated using GaCl3 as the precursor. The influence of the surface orientation of the substrate on GaN growth by THVPE was compared with that observed for GaN grown by hydride vapor-phase epitaxy. The dependence of the GaN growth on the surface orientation of the substrate was confirmed; GaN could be grown on
,
,
,
, and
but not on
,
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, or
. This behavior was explained to be due to the changes in adsorption energy, the magnitudes of which were estimated by theoretical calculations.
We demonstrated the selective‐area growth (SAG) of the nonpolar m‐plane true(10true1¯0true) and the polar −c‐plane (0001¯) substrates to determine the quasiequilibrium crystal shape (quasi‐ECS) by trihalide vapor phase epitaxy (THVPE). The results were compared with those by hydride vapor phase epitaxy (HVPE). The polar N‐face (0001¯) and the nonpolar m‐planes true{10true1¯0true} were consistently stable with the semipolar planes {101¯1¯} emerging only at high temperature for the quasi‐ECS grown by THVPE. The clear facets of the polar Ga‐face (0001) and Ga‐face sense semipolar planes such as true{10true1¯1true} did not appear. The kinetic Wulff plots for THVPE were constructed using the growth velocities for each emerging facet of the SAG.
Bird's‐eye view SEM images of the selective‐area GaN crystals grown on the m‐plane and –c‐plane for THVPE.
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