Transverse-junction-stripe-geometry double-heterostructure lasers with very low threshold current

Abstract

A new geometry DH laser is developed in which a very thin GaAs homojunction laser is sandwiched by (GaAl)As layers. The minimum threshold current is 63 and 80 mA for pulsed and cw operation at room temperature, respectively. The possibility of further reduction of threshold current is briefly mentioned.

A Simple Open‐Tube Zn‐Diffusion Technique for GaAs and AlGaAs

“…Zn-diffusion in GaAs and A1GaAs is a w e l l -k n o w n t e c h n i q u e used extensively for achieving a highly doped shallow p+-layer to facilitate lower ohmic contact resistance and also for forming p-n j u n c t i o n s in various electronic and opto-electronic device structures (1,2). The formation of sulfates and the p r e c i p i t a t i o n of Zn and Cd colloidal metals h a v e b e e n o b s e r v e d on the surfaces of p h o t o d a r k e n e d phosphors.…”

“…Phys., 22, L182 (1983). Zn-diffusion in GaAs and A1GaAs is a w e l l -k n o w n t e c h n i q u e used extensively for achieving a highly doped shallow p+-layer to facilitate lower ohmic contact resistance and also for forming p-n j u n c t i o n s in various electronic and opto-electronic device structures (1,2). The e v a c u a t e d sealed-tube diffusion m e t h o d has been used by other researchers (3,4) for this purpose; however, it was shown to be c u m b e r s o m e and primarily suited for small-scale e x p e r i m e n t a t i o n .…”

Lateral current injection photonic crystal membrane light emitting diodes

“…8 A robust fabrication process is necessary to create electrically injected PhC emitters that still maintain the exceptional qualities found with optically pumped devices. To meet this need, the devices described herein make use of lateral current injection ͑LCI͒, [9][10][11][12] whereby a transverse diode is first created within a semiconductor membrane via ion implantation doping, followed by patterning of a PhC at the diode junction ͑Fig. 1͒.…”

Relation between transverse mode control and longitudinal mode behavior in the injection laser

“…The appearance of so-called 'I-L kinks' was explained as an undesirable result of the gain-guiding mechanism or the active guided mode [Chinone, 1977;Lang, 1979]. On the basis of such theoretical investigations, the injection lasers have been designed to utilize the indexguiding mechanism or the normal guided mode with suitable stripe structures, and have shown stable single-mode operation in both transverse cross section and longitudinal direction [Namizaki et al, 1974…”