Lateral current injection photonic crystal membrane light emitting diodes

Long, Christopher M.; Giannopoulos, Antonios; Choquette, Kent D.

doi:10.1116/1.3360891

Cited by 12 publications

(4 citation statements)

References 32 publications

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“…17) Recently, lateral p-n junction approaches have been explored in an attempt to realize electrically pumped PC light sources. 18,19) This letter reports, to the best of our knowledge, the first successful lasing operation of an injectiontype membrane DFB laser with an LCI structure. cladding layers were composed of air (n ¼ 1) and SiO 2 (n ¼ 1:45), respectively.…”

mentioning

confidence: 92%

Injection-Type GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Wirelike Active Regions

Okumura

Koguchi

Ito

et al. 2011

Appl. Phys. Express

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A current-injection-type semiconductor membrane distributed feedback laser consisting of a 470-nm-thick semiconductor core and bonded by a benzocyclobutene polymer on a silicon-on-insulator substrate was demonstrated for the first time by adopting a lateral current-injection structure. Room-temperature pulsed operation was achieved with a threshold current of 83 mA for a stripe width of 3.2 µm and cavity length of 420 µm.

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mentioning

confidence: 92%

Injection-Type GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Wirelike Active Regions

Okumura

Koguchi

Ito

et al. 2011

Appl. Phys. Express

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“…To circumvent this issues, laterally-doped p-i-n structures were proposed recently. [22][23][24] CW lasing has been achieved by external cooling at an ambient temperature of ∼ 150 K. [23] Note that optically-pumped RT-CW lasing operation of a PhC nanolaser was already demonstrated by Nozaki, et al, [25] however, realization of its electrical counterpart has been a severe challenge. Therefore, we believe now is the time to reconsider the PhC slab design itself.…”

Section: Introductionmentioning

confidence: 99%

“…To circumvent this issues, laterally-doped p-i-n structures were proposed recently. [22][23][24] CW lasing has been achieved by external cooling at an ambient temperature of ∼ 150 K.…”

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confidence: 99%

From vertical-cavities to hybrid metal/photonic-crystal nanocavities: towards high-efficiency nanolasers

2012

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We provide a numerical study showing that a bottom reflector is indispensable to achieve unidirectional emission from a photonic-crystal (PhC) nanolaser. First, we study a PhC slab nanocavity suspended over a flat mirror formed by a dielectric or metal substrate. We find that the laser's vertical emission can be enhanced by more than a factor of 6 compared with the device in the absence of the mirror. Then, we study the situation where the PhC nanocavity is in contact with a flat metal surface. The underlying metal substrate may serve as both an electrical current pathway and a heat sink, which would help achieve continuous-wave lasing operation at room temperature. The design of the laser emitting at 1.3 μm reveals that a relatively high cavity Q of over 1000 is achievable assuming room-temperature gold as a substrate. Furthermore, linearly polarized unidirectional vertical emission with the radiation efficiency over 50% can be achieved. Finally, we discuss how this hybrid design relates to various plasmonic cavities and propose a useful quantitative measure of the degree of the "plasmonic" character in a general metallic nanocavity.

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“…Typically, p-n junctions are formed either by direct growth sequentially via thin film epitaxy from the substrate up or thermal diffusion using a solid or gaseous source, or ion implantation, into the substrate surface. Lateral p-n junctions along the substrate plane have long been desired for their geometric related properties: reduced junction capacitance, improved junction isolation by using semi-insulating substrates, coplanar contacts for ease of fabrication and increased ingretability [1], and the absence of high band-gap cladding for optoelectronic devices [2,3]. In addition, specific devices could directly benefit from lateral p-n junctions such as surface acoustic wave single photon emitters [4,5], laterally defined optoelectronic elements for photonic integrated circuits [6][7][8], high frequency optoelectronics [9], potential reduction in cost and increased freedom in circuit design for combined field effect and bipolar junction transistors (BiC-MOS) [10].…”

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confidence: 99%

Monolithic lateral p–n junction GaAs nanowire diodes via selective lateral epitaxy

Choi¹,

Zhang²,

Huang³

et al. 2021

Nanotechnology

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Semiconductor p-n junctions are essential building blocks of electronic and optoelectronic devices. Although vertical p-n junction structures can be formed readily by growing in sequence, lateral pn junctions normal to surface direction can only be formed on specially patterned substrates or by post-growth implantation of one type of dopant while protecting the oppositely doped side. In this study, we report the monolithic formation of lateral p-n junctions in GaAs nanowires (NWs) on a planar substrate sequentially through the Au-assisted vapor-liquid-solid selective lateral epitaxy using metalorganic chemical vapor deposition. p-type and n-type segments are formed by modulating the gas phase flow of p-type (diethylzinc) and n-type (disilane) precursors in situ during nanowire growth, allowing independent sequential control of p-and n-doping levels selfaligned in-plane in a single growth run. The p-n junctions formed are electrically characterized by fabricating arrays of p-n junction NW diodes with coplanar ohmic metal contacts and two-terminal I-V measurements. The lateral p-n diode exhibits a 2.15 ideality factor and a rectification ratio of ∼10 6 . The electron beam-induced current measurement confirms the junction position. The extracted minority carrier diffusion length is much higher compared to those previously reported, suggesting a low surface recombination velocity in these lateral NWp-n diodes.

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Lateral current injection photonic crystal membrane light emitting diodes

Abstract: Articles you may be interested inInGaN light-emitting diodes with indium-tin-oxide photonic crystal current-spreading layer

Cited by 12 publications

References 32 publications

Injection-Type GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Wirelike Active Regions

Injection-Type GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Wirelike Active Regions

From vertical-cavities to hybrid metal/photonic-crystal nanocavities: towards high-efficiency nanolasers

Monolithic lateral p–n junction GaAs nanowire diodes via selective lateral epitaxy

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