Injection-Type GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Wirelike Active Regions

Okumura, Tadashi; Koguchi, Takayuki; Ito, Hitomi; Nishiyama, N.; Arai, Shigehisa

doi:10.1143/apex.4.042101

Cited by 21 publications

(11 citation statements)

References 19 publications

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“…The cavity length and the stripe width were L = 300-μm and 1-μm, respectively. A threshold current of 11 mA, which was much lower than the previous report was obtained [15], however it was approximately 10 times higher than that of the theoretical value shown in Fig. 3.…”

Section: Introductioncontrasting

confidence: 63%

“…Furthermore, lateral-current-injection (LCI) structure has been adopted [12] and LCI type lasers on SI-InP substrate have been demonstrated [13], [14] as a step to realize an electrically pumped membrane laser. Recently, first demonstration of current injection type membrane-DFB laser with wirelike active regions had been achieved under roomtemperature (RT) pulsed current condition [15]. However, the threshold current was higher than 80 mA and was very high compared with the calculated result .…”

Section: Introductionmentioning

confidence: 91%

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Lateral-Current-Injection Type Membrane DFB Laser With Surface Grating

Shindo

Futami

Okumura

et al. 2013

IEEE Photon. Technol. Lett.

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Toward the light source for on-chip interconnection, a current-injection-type membrane distributed feedback laser with a surface gating structure is demonstrated. In this device, 450-nm-thick GaInAsP/InP layers with lateral-current-injection structure prepared by a two step OMVPE regrowth-method is bonded on a host substrate by using Benzocyclobutene bonding process. A threshold current of I th =11 mA is obtained with a cavity length of 300 µm and a stripe of 1 µm.

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Section: Introductioncontrasting

confidence: 63%

Section: Introductionmentioning

confidence: 91%

Lateral-Current-Injection Type Membrane DFB Laser With Surface Grating

Shindo

Futami

Okumura

et al. 2013

IEEE Photon. Technol. Lett.

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“…Furthermore, a PhC laser including a current post is unsuitable for constructing a large-scale PIC in terms of device uniformity because the cavity Q-factor is sensitive to the size of the current post. On the other hand, a lateral current injection structure is suitable for an air-bridge structure and it has been demonstrated for Fabry-Perot laser [15] and membrane DFB laser [16]. Furthermore, the lateral current injection structures have also been demonstrated in PhC lasers [17], [18].…”

Section: Introductionmentioning

confidence: 99%

Ultralow Operating Energy Electrically Driven Photonic Crystal Lasers

Matsuo

Sato

Takeda

et al. 2013

IEEE J. Select. Topics Quantum Electron.

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The introduction of the photonic crystal (PhC) wavelength-scale cavity as a laser cavity enables us to obtain both ultralow threshold current and operating energy. These parameters are essential when using the transmitters in chip-to-chip and on-chip interconnections. To improve the device performance, we employ an ultracompact embedded active region that we call a lambda-scale embedded active-region PhC laser or LEAP laser. We have developed an electrically driven LEAP laser, which operates under room-temperature continuous-wave conditions. To fabricate the electrically driven LEAP laser, we used Zn thermal diffusion and Si ion implantation, respectively, for p-type and n-type doping in an undoped InP layer. However, with previous fabricated devices there was a large leakage current through the substrate and the threshold current was 0.39 mA, which is larger than the expected threshold obtained by optical pumping. To reduce the leakage current, we propose using an InAlAs sacrificial laser instead of an InGaAs layer. The leakage current path through the substrate is effectively suppressed, and as a result, the threshold current is reduced to 7.8 μA, which is the lowest threshold current reported for any laser. Furthermore, the LEAP laser operates at up to 95 • C by using an InGaAlAs-based multiple quantum well structure. We also describe the dynamic characteristics of the laser. The LEAP laser exhibits a maximum 3-dB bandwidth of 16.2 GHz and the modulation current efficiency factor is 53.8 GHz/mA 0 .5 or 1.7 GHz/μA 0 .5 , which is four times that of a vertical cavity surface-emitting laser. The device is directly modulated by a 12.5-Gb/s nonreturn-to-zero signal with a bias voltage of 1.6 V and a bias current of 109 μA, resulting in an energy cost of 14.0 fJ/b. This is the smallest operating energy for any laser. These results indicate that the LEAP laser is highly suitable for use as a transmitter in computercom applications.

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“…The membrane structure has an ability to reduce the operating current of DFB laser as following reasons. A thin semiconductor layer sandwiched by dielectric claddings enhances the optical confinement factor of the active layers [32]. A large refractive-index difference between the core and cladding layers results in strong grating index-coupling [33].…”

Section: Introductionmentioning

confidence: 99%

Integrated Optical Link on Si Substrate Using Membrane Distributed-Feedback Laser and p-i-n Photodiode

Inoue¹,

Hiratani²,

Fukuda³

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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On-chip optical interconnection is a promising technology for wiring future large-scale integrated circuits, as a means to mitigate the considerable power dissipation of traditional wiring layers. Here, we fabricate an integrated optical link using a membrane distributed-feedback (DFB) laser and a p-i-n photodiode (PD) in a butt-jointed built-in coupling geometry. The optical link is formed on a Si substrate by benzocyclobutene bonding. The integrated DFB laser shows a low-threshold current of 0.48 mA. Light transmission between the DFB laser and the p-i-n PD is confirmed with static measurements of the optical link. The optical link has a 3-dB bandwidth of 11.3 GHz at a 2.73 mA DFB laser bias current and a -3 V p-i-n PD bias voltage. A data transmission experiment of the optical link is performed, using a nonreturn to zero, pseudorandom-bit-sequence with a word length of 2 31 -1 signals. With a DFB laser bias current of 2.5 mA, 10 Gbit/s data transmission with a bit-error-rate of 6 × 10 -7 is successfully achieved.

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Injection-Type GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Wirelike Active Regions

Cited by 21 publications

References 19 publications

Lateral-Current-Injection Type Membrane DFB Laser With Surface Grating

Lateral-Current-Injection Type Membrane DFB Laser With Surface Grating

Ultralow Operating Energy Electrically Driven Photonic Crystal Lasers

Integrated Optical Link on Si Substrate Using Membrane Distributed-Feedback Laser and p-i-n Photodiode

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