Zn diffusion into 2-in.-diam semi-insulating GaAs wafers has been carried out by a simple, open-tube diffusion method using a commercially available GaAsZn solid source and without surface coating or encapsulation. High-quality (μ=75–100 cm2/V s) layers with a flat carrier concentration and sharp cutoff Zn distribution have been obtained. The p-type layers obtained by this method are uniform across the wafer, and the technique can be easily scaled up. Selective diffusion of Zn was also demonstrated with this technique, using a plasma-deposited Si3N4 as a diffusion mask.
An optical circuit was designed and built to facilitate the testing of a free-space optical interconnect. Details of the optical design are presented. The interconnect was based on a hybrid CMOS/GaAs chip which had a I 6 x I 6 array of detectors on a 250 m pitch interlaced with a 1 6 x I 6 array of modulators. The optomechanics enabled two such chips, bonded to printed circuit boards, to be mounted, positioned and aligned relative to each other. The operating wavelength of the devices was 827 nm. The optical system worked successfully and alignment could be achieved across the array with ease and high precision.
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