Transverse Dember Effect and Anisotropy of Carrier Mobilities in Tellurium Single Crystals

Genzow, D.

doi:10.1002/pssb.2220550210

Cited by 10 publications

(2 citation statements)

References 17 publications

(8 reference statements)

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Section: Other Semiconductor Crystalsmentioning

confidence: 99%

“…These components can occur for several reasons, in ref. [41] named as such the transverse photo-Dember effect at high photon energies [42] and the lateral ballistic movement of charge carriers at low photon energies arising due to the energy band anisotropy. The latter component is characterized by cos 3φ proportional azimuthal angle dependencies and probably has a similar origin as in other semiconductors [17].…”

Section: Telluriummentioning

confidence: 99%

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Semiconductor Characterization by Terahertz Excitation Spectroscopy

2023

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Surfaces of semiconducting materials excited by femtosecond laser pulses emit electromagnetic waves in the terahertz (THz) frequency range, which by definition is the 0.1–10 THz region. The nature of terahertz radiation pulses is, in the majority of cases, explained by the appearance of ultrafast photocurrents. THz pulse duration is comparable with the photocarrier momentum relaxation time, thus such hot-carrier effects as the velocity overshoot, ballistic carrier motion, and optical carrier alignment must be taken into consideration when explaining experimental observations of terahertz emission. Novel commercially available tools such as optical parametric amplifiers that are capable of generating femtosecond optical pulses within a wide spectral range allow performing new unique experiments. By exciting semiconductor surfaces with various photon energies, it is possible to look into the ultrafast processes taking place at different electron energy levels of the investigated materials. The experimental technique known as the THz excitation spectroscopy (TES) can be used as a contactless method to study the band structure and investigate the ultrafast processes of various technologically important materials. A recent decade of investigations with the THz excitation spectroscopy method is reviewed in this article. TES experiments performed on the common bulk A3B5 compounds such as the wide-gap GaAs, and narrow-gap InAs and InSb, as well as Ge, Te, GaSe and other bulk semiconductors are reviewed. Finally, the results obtained by this non-contact technique on low-dimensional materials such as ultrathin mono-elemental Bi films, InAs, InGaAs, and GaAs nanowires are also presented.

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Section: Other Semiconductor Crystalsmentioning

confidence: 99%

Section: Telluriummentioning

confidence: 99%

Semiconductor Characterization by Terahertz Excitation Spectroscopy

2023

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Nernst‐Ettingshausen and Seebeck Effect of Pure and Electron‐Irradiated Tellurium at Low Temperatures

Saffert

Schapawalow

Łandwehr

et al. 1974

Physica Status Solidi (b)

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For the first time experimental data of the Nernst-Ettingshausen effect a t low temperatures in tellurium are reported. Measurements of resistivity, Hall coefficient, Seebeck coefficient, and Nernst-Ettingshausen coefficient on the same sample allow to deduce directly the scattering exponent r, which characterizes the energy dependence of the relaxation time t. The results clearly reveal a strong anisotropy in the scattering factor r. This is explained by the presence of dislocations. Irradiations with 1 MeV electrons at low temperatures confirm earlier results on the recovery stages I and I1 in tellurium. It is demonstrated that the Nernst-Ettingshausen effect is a very useful tool to decide whether recombination or only rearrangement of radiation induced defects occurs during sample recovery.Erstmals werden Messungen des Nernst-Ettingshausen-Effekts bei tiefen Temperaturen in Tellur mitgeteilt. Aus dem spezifischen Widerstand, dem 'Hall-, Seebeck-und NernstEttingshausen-Koeffizienten kann direkt der Streuexponent r abgeleitet werden, der die Energieabhangigkeit der Relaxationszeit t charakterisiert. Die Ergebnisse zeigen klar eine starke Anisotropie des Streuexponenten r, was durch die Existenz von Versetzungen erklart wird. Bestrahlungen mit 1 MeV-Elektronen bei tiefen Temperaturen bestatigen friihere Ergebnisse iiber die Ausheilstufen I und I1 in Tellur. E s wird gezeigt, da13 der Nernst-Ettingshausen-Effekt besonders gut geeignet ist zu entscheiden, ob wLhrend der Erholung der strahleninduzierten Schaden Defektrekombination oder lediglich eine Defektumlagerung erfolgt.

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Galvanomagnetic properties of anisotropic semiconductors of the p‐Te type

Tomchuk

Shenderovskiǐ

Gorley

et al. 1975

Physica Status Solidi (b)

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Expressions for the independent galvanomagnetic resistance tensor components in weak magnetic fields are obtained for p-Te type semiconductors, using a variational method. Carrier scattering by optical lattice vibrations is considered without using the relaxation time approximation. With p-Te as an example, the temperature dependence of the tensor components ; ( H ) is studied both theoretically and experimentally for temperatures between 77 and 300 "K. From comparison between the calculated and measured values of $(If)

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Transverse Dember Effect and Anisotropy of Carrier Mobilities in Tellurium Single Crystals

Cited by 10 publications

References 17 publications

Semiconductor Characterization by Terahertz Excitation Spectroscopy

Semiconductor Characterization by Terahertz Excitation Spectroscopy

Nernst‐Ettingshausen and Seebeck Effect of Pure and Electron‐Irradiated Tellurium at Low Temperatures

Galvanomagnetic properties of anisotropic semiconductors of the p‐Te type

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