Galvanomagnetic properties of anisotropic semiconductors of the p‐Te type

Tomchuk, P. M.; Shenderovskiǐ, V. A.; Gorley, P. M.; Gavaleshko, N. P.; Solonchuk, L. S.

doi:10.1002/pssb.2220720103

Cited by 7 publications

(9 citation statements)

References 15 publications

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“…If L < l energy , the collision of electrons with the walls of the nanostructure becomes an important cooling mechanism with which electrons can loose their energy. 28,29,31 Tomchuk and Fedorovich developed a model 32 for electron cooling in a nanoparticle of the size L in which electrons collide with the nanoparticle's surface with the frequency v F /L, and obtained a formula relating the electron temperature in the nanoparticle to the electrical power injected into the nanostructure:…”

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confidence: 99%

Spontaneous Hot-Electron Light Emission from Electron-Fed Optical Antennas

et al. 2015

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Nanoscale electronics and photonics are among the most promising research areas providing functional nano-components for data transfer and signal processing. By adopting metalbased optical antennas as a disruptive technological vehicle, we demonstrate that these two device-generating technologies can be interfaced to create an electronically-driven self-emitting unit. This nanoscale plasmonic transmitter operates by injecting electrons in a contacted tunneling antenna feedgap. Under certain operating conditions, we show that the antenna enters a

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confidence: 99%

Spontaneous Hot-Electron Light Emission from Electron-Fed Optical Antennas

et al. 2015

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“…It is readily seen that if the collision frequency is independent of energy, then the contribution of the terms to the current is zero. Actually, however, in semiconductors the collision frequency is a function of energy, which will be specified as [8] where vo and r depend on the scattering mechanisms, lattice temperature, and, possibly, carrier temperature. Then from (11) with account of (13), (14), and (24) we obtain (in calculating these terms it suffices to confine oneself to considering a parabolic dispersion law, setting a = b = 0 in (16)) 2 4…”

Section: B Kmentioning

confidence: 99%

Plasma‐Electric Effect in Anisotropic Semiconductors in Heating Electric Field

Gorlei

Zagorodnyaya

Shenderovskiǐ

1990

Physica Status Solidi (b)

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The effect of appearance of a constant current (at a closed circuit) in anisotropic semiconductors at propagation of longitudinal oscillations with an external carrier-heating electric field applied to the sample is investigated. The departure of the energy dispersion law from the isotropic parabolic one (as, e.g., in tellurium) is ascertained to result in an additional term in the expression for the current, which is absent for an equilibrium plasma; its contribution can be determined under certain conditions. Consideration of the energy dependence of the relaxation time as well brings about additions to the constant current, which may also be in an equilibrium plasma. Dependences of the current on the oscillation frequency and wave vector as well as on orientation of the external electric field relative to crystallographic axes are derived.Es wird das Auftreten eines konstanten Stroms (im geschlossenen Stromkreis) in anisotropen Halbleitern bei Ausbreitung von longitudinalen Oszillationen mit einem auDeren, die Ladungstrager aufheizenden elektrischen Feld an der Probe untersucht. Die Abweichung des Energiedispersionsgesetzes von der isotropen parabolischen Form (wie z. B. in Tellur) fiihrt zu einem zusatzlichen Term im Ausdruck fur den Strom, der fur ein Gleichgewichtsplasma fehlt; unter bestimmten Bedingungen kann sein Beitrag bestimmt werden. Die Beriicksichtigung der Energieabhangigkeit der Relaxationszeit ruft ebenfalls Zusatze zum konstanten Strom hervor, die auch in einem Gleichgewichtsplasma vorhanden sein konnen. Die Abhangigkeit des Stromes sowohl von der Oszillationsfrequenz-und Wellenvektor als auch von der Orientierung des auDeren elektrischen Felds relativ zu den kristallographischen Achsen wird abgeleitet.

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“…I n our previous studies, e.g. [12], these constants were determined by comparison between the calculated and measured temperature dependences of mobilities and magnetoresistance. Maximum mobilities in p-Te a t nitrogen temperature available a t present are of the order 6 x los cm2V-4-l. To these correspond the following values:…”

Section: Theorymentioning

confidence: 99%

Transverse and Longitudinal Nernst‐Ettingshausen Effect in p‐Te

Gavaleshko

Gorley

Kavyuk

et al. 1978

Physica Status Solidi (b)

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Using a variational method, general formulae for the kinetic tensor components describing the galvanomagnetic phenomena in anisotropic semiconductors of the p-Te type are obtained in terms of matrix elements of different scattering mechanisms for the case of arbitrary magnitude and direction of the non-quantizing magnetic field. Theoretical and experimental results of the temperature and field dependences of the transverse and longitudinal Nernst-Ettingshausen effect in p-Te are compared and discussed.Mit einer Variationsmethode werden allgemeine Formeln fur die kinetischen Tenaorkomponenten erhalten, die die galvanomagnetischen Phiinomene in anisotropen Halbleitarn vom p-Te-Typ beschreiben, wobei die Matrixelemente der verschiedenen Streumechanismen fur beliebige GriiBe und Riohtung des nicht quantisierenden Magnetfeldes benutzt werden. Theoretische und experimentelle Ergebnisse der Temperatur-und Feldabhiingigkeiten des transversalen und longitudinalen Nernst-Ettingshausen-Effekts in p-Te werden verglichen und diskutiert. 12.

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Galvanomagnetic properties of anisotropic semiconductors of the p‐Te type

Cited by 7 publications

References 15 publications

Spontaneous Hot-Electron Light Emission from Electron-Fed Optical Antennas

Spontaneous Hot-Electron Light Emission from Electron-Fed Optical Antennas

Plasma‐Electric Effect in Anisotropic Semiconductors in Heating Electric Field

Transverse and Longitudinal Nernst‐Ettingshausen Effect in p‐Te

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