I n semiconductors with PbSnTe-like band structure the Auger coefficient C, is investigated for most probable eeh transitions taking into account a nonparabolic approximation (NPA). Considering mirror-symmetric hyperbolic bands, singularities in the so-called "activation energy" appear which are removed if deviations from the hyperbolicity are included. At high temperatures T I the value of C , in NPA has the same order of magnitude as the value Czm proposed by Emtage and is nearly independent of temperature; if TI < 77 K the value of C, strongly decreases and differs by orders of magnitude from C:". The obtained results are compared with experimental data.Der Augerkoeffizient C , fur Halbleiter mit PbSnTe-iihnlicher Bandstruktur wird unter Beriicksichtigung von deren Nichtparabolizitiit (NPA) fur die statistisoh wahrscheinlichsten eeh Prozesse untersucht. Setzt man spiegelsymmetrische hyperbolische Biinder voraus, treten Singularitiiten in der sogenannten ,,Aktivierungsenergie" auf, die bei nichthyperbolischen Biindern verschwinden. Fur hohe Temperaturen 2' 1 liegt der Wert von C, in der gleichen GroSenordnung wie der von Emtage vorgeschlagene ( 7 : " und ist ebenfalls schwach temperaturabhiingig; fiir TI < 77 K nimmt C, stark ab und unterscheidet sich um einige GroSenordnungen von C:". Die erhaltenen Werte werden mit experimentellen Ergebnissen verglichen.
ii refractive index, m free electron mass, U Bloch functions for valence 0 v,c and conduction band states, respectively; i , j denote the two degenerate
The disagreement is stronger for the six-band model. The temperature-and composition-dependence of K near the absorption edge are described better by the two-band than by the six-band model.
In a wide range of temperature and doping level the small signal lifetime for Auger recombination, spontaneous emission of radiation, and for spontaneous emission of plasmons is calculated in the compounds Pb0.78Sno. 22Te and Pb0.91Sno0.09Se. In the calculation degeneracy of the carrier gas and anisotropy of band structure is taken into account. At donor concentrations ND > 1019 cm−3, recombination by emission of plasmons dominates. For ND < 5 ×1016 cm−3 radiative recombination dominates in Pb0.78. Sno22Se up to temperatures TL < 180 K, in Pb0.09Se, however, up to 230 K.
Photoluminescence (PL) measurements are carried out at 90 K on (100)‐oriented PbTe films, deposited by hot‐wall epitaxy on GaAs and CdTe. From different spectral positions of the PL signal obtained with frontside and backside excitation and signal pickup, it is concluded that thermally induced strain influences the gap. From that a method can be derived to adjust bufferlayers on which PbTe films or PbTe containing structures like MQW's are deposited. Thus the spectral position of the PbTe‐PL signal may be used to estimate the strain in the PbTe of PbTe containing structure.
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