On the interband absorption in lead chalcogenides

Abstract

The disagreement is stronger for the six-band model. The temperature-and composition-dependence of K near the absorption edge are described better by the two-band than by the six-band model.

Lead Telluride (PbTe)

“…It turns out that for carrier densities below 1019 cm-3, the values of e~ are also independent of electron concentration N. In the region below and around the fundamental absorption edge, optical constants have been determined and discussed in a number of works [9][10][11][21][22][23][24][25][26][27][28]. Early precise measurements on the refractive index in the 0.1-0.5-eV range were performed by Zemel et al [9] on epitaxial films by using an interferometric and weighing technique with an experimental error in n of about _+ 3~.…”

“…The results by Globus et al [11] are not influenced by a Burstein-Moss shift at room temperature. The influence of free carriers on the absorption constant is discussed in the framework of several band models (Kane, twoband, six-band, Cohen models) in [11,27,28]. In addition, the authors suggest that apart from transitions at the L point (~;gL ~ 0.32 eV), transitions originate from other close-lying, valence-band extrema presumably in the direction of A.…”

The Influence of Far‐Band k · p Interaction on Carrier States in Lead Chalcogenides

“…k+ -= k, & ik, with k, taken in the ( I l l > direction of the Brillouin zone. The matrices h4, h,, h,, and h, are given analogous to (5). For the sake of convenience we express H by means of the 4 x 4 matrices H , ( where, e.g.,…”

Effect of a longitudinal magnetic field on the diffusion coefficient of the minority carriers in solid state junction lasers

“…the well-known fonn as E 12k2/2m$ (6) Therefore the density-of--staies function in the absence of magnetic field as given by eq. The diffusion coefficient of the minority carriers is one such important parameters a S S known to affe C t di re C tly the thre shol d Cu rren t densi ty in the semiconductor junction lasers.1 This the study of the effects of a inanetic field on the diffusion coefficient would be of interest in conne ction wi tb the de texnination of the magne tic propertie s of the semiconductor junction lasers.…”