For the first time experimental data of the Nernst-Ettingshausen effect a t low temperatures in tellurium are reported. Measurements of resistivity, Hall coefficient, Seebeck coefficient, and Nernst-Ettingshausen coefficient on the same sample allow to deduce directly the scattering exponent r, which characterizes the energy dependence of the relaxation time t. The results clearly reveal a strong anisotropy in the scattering factor r. This is explained by the presence of dislocations. Irradiations with 1 MeV electrons at low temperatures confirm earlier results on the recovery stages I and I1 in tellurium. It is demonstrated that the Nernst-Ettingshausen effect is a very useful tool to decide whether recombination or only rearrangement of radiation induced defects occurs during sample recovery.Erstmals werden Messungen des Nernst-Ettingshausen-Effekts bei tiefen Temperaturen in Tellur mitgeteilt. Aus dem spezifischen Widerstand, dem 'Hall-, Seebeck-und NernstEttingshausen-Koeffizienten kann direkt der Streuexponent r abgeleitet werden, der die Energieabhangigkeit der Relaxationszeit t charakterisiert. Die Ergebnisse zeigen klar eine starke Anisotropie des Streuexponenten r, was durch die Existenz von Versetzungen erklart wird. Bestrahlungen mit 1 MeV-Elektronen bei tiefen Temperaturen bestatigen friihere Ergebnisse iiber die Ausheilstufen I und I1 in Tellur. E s wird gezeigt, da13 der Nernst-Ettingshausen-Effekt besonders gut geeignet ist zu entscheiden, ob wLhrend der Erholung der strahleninduzierten Schaden Defektrekombination oder lediglich eine Defektumlagerung erfolgt.
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