Dose-dependency and recovery behaviour of transport properties of electron irradiated tellurium

Saffert, R.; Gmelin, E.; Łandwehr, G.

doi:10.1088/0022-3719/11/13/018

Cited by 3 publications

(1 citation statement)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Doping with a few times 1014 acceptors/cm3 improves the mobility up to two orders of magnitude. The mobility can also be increased by creating Frenkel pairs through high energy electron irradiation [15]. It should also be noted that there is a strong discrepancy between the low dc mobility and the mobility of about 10000 cm2/Vs which can be estimated from the lineshape of cyclotron resonance experiments in samples cut from the same single crystal HWTe 42 as our specimen [12].…”

Section: (7)mentioning

confidence: 99%

Influence of the Surface on the Galvanomagnetic Properties of Tellurium

Englert¹,

Klitzing²,

Silbermann³

et al. 1977

Physica Status Solidi (b)

View full text Add to dashboard Cite

At real tellurium surfaces natural accumuIation layers exist which can be changed substantially by different etching processes. For pure samples this surface layer may mask the galvanomagnetic properties of the bulk completely. Employing a new etching process the influence of the surface can be reduced drastically, complete elimination is possible using a field effect arrangement. A comparison of the results obtained from samples with different degrees of accumulation at the surface allows a separation of the galvanomagnetic properties of the surface and the bulk.

show abstract

Section: (7)mentioning

confidence: 99%