Recovery behavior of tellurium irradiated with 20-MeV electrons and the influence of lattice defects on the transport properties

Helmreich, K. H.; Łandwehr, G.; Keck, K.

doi:10.1103/physrevb.24.1664

Cited by 1 publication

(3 citation statements)

References 17 publications

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“…This brings about more complicated mechanisms for the strain-induced change in resistance under strains larger than 4%. The influence of dislocations on the electron transport properties have been studied in bulk Te, , though the extent of this effect here is unclear. It was found that c -screw dislocations can act as scattering centers and result in a decrease in hole mobility .…”

Section: Resultsmentioning

confidence: 99%

“…The influence of dislocations on the electron transport properties have been studied in bulk Te, , though the extent of this effect here is unclear. It was found that c -screw dislocations can act as scattering centers and result in a decrease in hole mobility . However, such dislocations also provide local acceptor levels, which in turn generate higher carrier concentrations .…”

Section: Resultsmentioning

confidence: 99%

“…It was found that cscrew dislocations can act as scattering centers and result in a decrease in hole mobility. 53 However, such dislocations also provide local acceptor levels, which in turn generate higher carrier concentrations. 54 Once dislocations generate and accumulate in the plastic regime, this factor may dominate the resistance change and result in a slower resistance decrease.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Mechanical Properties and Piezoresistivity of Tellurium Nanowires

Ran

Glen

et al. 2019

J. Phys. Chem. C

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Among elemental semiconductors, tellurium (Te) exhibits unique mechanical and electromechanical properties due to its highly anisotropic crystal structure and mixed interatomic bonding modes. A lack of experimental investigations of these properties inhibits its adoption in new applications both in bulk form as well as at the nanoscale. In this study, uniaxial tensile tests were conducted in a scanning electron microscope (SEM) on [0001] orientated Te nanowires (NWs) with diameters ranging from 15 to 35 nm. An average elastic modulus is estimated to be 38.6 ± 4.7 GPa. Both elastic and elastic−plastic behaviors are observed in tested NWs, with a large fracture strain of up to 18% achieved in the latter case. Regardless of the deformation type, electromechanical tests of Te NWs show a trend of decreasing resistance with increasing strain at low-to-moderate tensile strains (0−4%). This piezoresistive effect provides for new opportunities for tellurium to be utilized either in nanoscale devices or in systems that can utilize the extraordinary properties of single-crystal tellurium.

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Section: Resultsmentioning

confidence: 99%