Transport behavior of holes in boron delta-doped diamond structures

Abstract

Boron delta-doped diamond structures have been synthesized using microwave plasma chemical vapor deposition, and fabricated into FET and gated Hall bar devices for assessment of the electrical characteristics. A detailed study of variable temperature Hall, conductivity and field-effect mobility measurements was completed. This was supported by Schrödinger-Poisson and relaxation time calculations based upon application of Fermi's golden rule. A two carrier-type model was developed with an activation energy of ~0.2 eV between the delta layer lowest subband with mobility ~1 cm 2 /Vs and the bulk valence band with high mobility. This new understanding of the transport of holes in such boron delta-doped structures has shown that although Hall mobility as high as 900 cm 2 /Vs was measured at room temperature, this dramatically overstates the actual useful performance of the device.a Corresponding author

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

“…14,15 Hall effect combined to four probe resistivity measurements have also been used to evaluate the sheet density (p S ) and the carrier mobility (l H ). [15][16][17][18] A low sheet carrier density p S ' 10 13 cm À2 and a hole mobility l H ¼ 13 cm 2 / V.s at room temperature in delta structures grown on [111]-oriented diamond substrates were reported, 15 but unfortunately, no temperature dependence of p S and l H in delta structures was shown for the same samples. One of the recent works reported a very low mobility at low temperature (l H $ 1 cm 2 /V.s at T ¼ 100 K) and a high mobility at room temperature (l H $ 900 cm 2 /V.s).…”

Атомный Состав И Электрофизические Характеристики Эпитаксиальных Слоев CVD Алмаза, Легированных Бором

“…Однако большие значения энергии активации примеси создают проблемы получения легированных слоев с необходимыми для полупроводниковых приборов свойствами. Поэтому мно-гими группами [2][3][4][5][6][7][8][9] ведутся исследовательские работы по изучению возможности получения эпитаксиальных пленок алмаза электронного и дырочного типов про-водимости при комнатной температуре. С этой целью применяется сильное легирование, которое позволя-ет существенно снизить энергию активации примеси.…”

Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers

“…Note that for thicker layers (sample A) the difference is not so critical in contrast to thinner layers (#4 sample A and sample B). Such behavior motivated other authors to use complementary techniques to improve the SIMS profile; Chicot et al 27 calculate this broadening to correct the experimental data while Balmer et al 28 complete the SIMS data with elastic recoil detection analysis (ERDA) to estimate boron-doping thickness. Here, as a first result, a 5 nm-thick layer is demonstrated directly by the HAADF-STEM profile, showing that the growth technology is now close to reach quantum confinement enhancement of mobility.…”