Transmission electron microscope analysis of epitaxial growth processes in the sputtered β-FeSi2/Si(001) films

Thickness Dependent Formation of Iron Silicides on Clean and Boron Modified Si(001) Surface

“…[15] where Fe was deposited on Si(001) surface at 500 • C and in Ref. [16] where ε-crystallites were grown by RF magnetron sputtering of Fe at temperature higher than 700 • C. Growth of ε-FeSi islands was also observed for Fe deposition on the Si(110) surface [17]. It was established the epitaxial relationships for islands were the same as in our work.…”

Growth of β-FeSi2 particles on silicon by reactive deposition epitaxy

“…Black dots represent Si reflections, crosses represent ␤-FeSi 2 reflections, squares represent ␥-FeSi 2 reflections and triangles, rhombs, hexagons and small triangles represent the ␣-FeSi 2 reflections, originating from four different orientation variants. [23,24]. However, such an epitaxial relationship could be explained in a way similar with that of the epitaxy of FeSi 2 on Si (1 1 1), where the orientation of the ␤-FeSi 2 was found to depend strongly on kinetic factors, in particular on the stoichiometry of the initial deposition [25].…”

Microstructure analysis of β‐FeSi2 grown on Ag‐coated Si(001) substrate

“…β-FeSi 2 (-1-33)[011] // Si (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)[110] The OR is quite rare for the films grown on the both noncoated and metal-coated Si (001) substrates. In this OR, the β-FeSi 2 (100) plane inclines at an angle of about 10 degrees from the (001) plane, or the surface of Si substrate.…”

“…1 Introduction Semiconducting β-FeSi 2 is a very promising material for application in ecologically friendly optoelectronic devise, because of its excellent potential such as an optical band gap of about 0.85 eV (near 1.54 μm). Numerous efforts have been performed in growing epitaxial β-FeSi 2 films on and in Si substrates by the several deposition methods [1][2][3][4][5]. However, most of β-FeSi 2 specimens were annealed at relative high temperatures (800~900 ºC) for long times (~40 h) in order to enhance the photoluminescence (PL) intensities and the photovoltaic properties [6,7].…”