Growth of β-FeSi2 particles on silicon by reactive deposition epitaxy

Vouroutzis, Ν.; Zorba, T.; Dimitriadis, C. A.; Paraskevopoulos, K. M.; Dózsa, L.; Molnár, G.

doi:10.1016/j.jallcom.2006.10.049

Cited by 15 publications

(9 citation statements)

References 28 publications

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“…The particular transmission electron microscopy phase analysis of iron silicide nanostructures was done earlier, and was presented in our previous paper [26]. According to these results, the nanostructures contain three different iron disilicide phases, i.e.…”

Section: Discussionmentioning

confidence: 82%

Morphological and electrical properties of self-assembled iron silicide nanoparticles on Si(0 0 1) and Si(1 1 1) substrates

Molnár

Dózsa

Erdélyi

et al. 2015

Applied Surface Science

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Section: Discussionmentioning

confidence: 82%

Morphological and electrical properties of self-assembled iron silicide nanoparticles on Si(0 0 1) and Si(1 1 1) substrates

Molnár

Dózsa

Erdélyi

et al. 2015

Applied Surface Science

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“…The misfit differences of Si(001) and of the three iron disilicide phases, written in the introduction section, are within two percent [11] that is why the RHEED cannot differentiate between them. The particular phase identification of iron disilicide nanostructures by transmission electron microscopy selected area electron diffraction was presented for similar samples in a previous paper [15].…”

Section: Discussionmentioning

confidence: 94%

Iron Silicide Nanostructures Prepared by E-Gun Evaporation and Annealing on Si(001)

et al. 2013

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Iron silicide nanostructures were grown on Si(001) by strain-induced, self-assembly method. E-gun evaporated iron particles were deposited both onto room temperature and high temperature Si substrates, and were further annealed in situ. The initial Fe thickness was in the 0.1-6 nm range and the annealing temperatures varied between 500 and 850°C. The phases and structures formed were characterized by reflection high energy electron diffraction and by scanning electron microscopy. The electrical characteristics were investigated by I-V and C-V measurements, and by deep level transient spectroscopy. The size distributions of the formed iron silicide nanostructures were not homogeneous but, were oriented in perpendicular directions on Si(001). Higher temperature annealing resulted in increased particles size and faceting. Electrical characteristics showed critical defect concentration related to Fe.

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“…The detailed transmission electron microscopy phase analysis of iron silicide nanostructures was presented in our previous paper [27]. Where, the nanostructures contain This ordering is a direct consequence of Ostwald ripening phenomena, where the bigger islands grow further at the cost of the smaller ones.…”

Section: Resultsmentioning

confidence: 99%

“…The question is whether the previous nucleation controlled phase transformation had any effect on the morphology of the iron disilicide nanostructures. Previously, the existence of iron silicide nanostructures was demonstrated in the case of reactive deposition epitaxy method, where iron particles were evaporated onto heated Si substrates [27]. This research may result in new knowledge in morphology changes of iron silicides and, on the practical side, may help to prepare more effective environmentally friendly solar cells, and Si based optoelectronics.…”

Section: Introductionmentioning

confidence: 99%

Epitaxy in solid-phase thin film reactions: Nucleation-controlled growth of iron silicide nanostructures on Si(001)

Molnár

2013

J. Mater. Res.

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A special type of epitaxial growth appears during solid phase thin film reactions, where the reaction product grows epitaxially on the substrate. Some metal silicide layers and nanostructures are known to develop such epitaxial structures. In this study iron silicide was used to study the effect of the growth mode on the epitaxial growth. Strain-induced, self-assembled iron silicide nanostructures were grown on Si(001) substrates by electron gun evaporation of 1.0 nm iron and subsequent annealing at 500-850°C for 60 minutes. The growth processes were checked by reflection high energy electron diffraction, and the formed structures were characterized by scanning electron microscopy and optical microscopy. The iron silicide nanostructures were oriented in square directions epitaxially fitting to the surface of Si(001). The shape and size of the nanostructures depended on the annealing temperature. In some cases the nanoparticles were arranged in circles. This might be the direct consequence of a nucleation controlled type transition of iron monosilicide to iron disilicide phase at nanoscale.

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Growth of β-FeSi2 particles on silicon by reactive deposition epitaxy

Cited by 15 publications

References 28 publications

Morphological and electrical properties of self-assembled iron silicide nanoparticles on Si(0 0 1) and Si(1 1 1) substrates

Morphological and electrical properties of self-assembled iron silicide nanoparticles on Si(0 0 1) and Si(1 1 1) substrates

Iron Silicide Nanostructures Prepared by E-Gun Evaporation and Annealing on Si(001)

Epitaxy in solid-phase thin film reactions: Nucleation-controlled growth of iron silicide nanostructures on Si(001)

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