Transistors for VLSI, for wireless: A view forwards through fog

Rodwell, M.J.W.; Huang, Cheng-Ying; Rode, Johann C.; Choudhary, Prateek; Lee, Sang‐Ho; Gossard, A. C.; Long, Pengyu; Wilson, Emma; Mehrotra, Saumitra Raj; Povolotskyi, Michael; Klimeck, Gerhard; Urteaga, M.; Brar, B.; Chobpattanna, V.; Stemmer, Susanne

doi:10.1109/drc.2015.7175529

Cited by 3 publications

(3 citation statements)

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“…With transistors reaching their scaling limit there is a need to move beyond traditional designs . Interesting novel devices have been proposed that base their theoretical superior electronic performances on specific heterostructures, particular crystal orientations and the anisotropy of III–V energy bands, − planar gating enabled by lateral growth, and buried oxides.…”

Section: Introductionmentioning

confidence: 99%

“…With transistors reaching their scaling limit there is a need to move beyond traditional designs. 12 Interesting novel devices have been proposed that base their theoretical superior electronic performances on specific heterostructures, particular crystal orientations and the anisotropy of III−V energy bands, 13−16 planar gating enabled by lateral growth, and buried oxides. Energy filters that reduce injection into the channel of electrons having energy above the source Fermi energy have been proposed for nanowire field-effect transistor (FET) devices.…”

Section: Introductionmentioning

confidence: 99%

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Horizontal Heterojunction Integration via Template-Assisted Selective Epitaxy

Brunelli

Goswami

Markman

et al. 2019

Crystal Growth & Design

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We report on the successful integration of multiple atomically thin horizontal heterojunctions (HJs) epitaxially grown via metal organic chemical vapor deposition inside a confined template of dielectric material. InAs, GaAs, and InGaAs layers were included in laterally grown InP structures and characterized to show abrupt interfaces and crystalline material. The orientation of the templates and the substrate is chosen so that a flat vertical facet appears at the growth front allowing for the HJs to be horizontal, unlike typical planar epitaxy. This enables the design of recently proposed novel electronic HJ devices like triple-HJ tunnel field-effect transistors.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Horizontal Heterojunction Integration via Template-Assisted Selective Epitaxy

Brunelli

Goswami

Markman

et al. 2019

Crystal Growth & Design

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“…It means the signal can travel faster with CSDG MOSFET. The low power demands low V DD so lower I off [29]. The HfO 2 used in the CSDG MOSFET can also be scaled down due to its crystal size and thickness as shown in table I.…”

Section: A Scaling Of Si: Sio 2 : Hfo 2 : Metalmentioning

confidence: 99%

Scaling Effect on Parameters of HfO2 Based CSDG MOSFET

Srivastava¹

2017

IJET

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-To make obvious the advantages of Nanoelectronic circuits with addition of functionality and chip density compared to the simple switch, application of cylindrical surrounding double-gate (CSDG) MOSFET is suitable. In addition to the Silicon-dioxide, in this present work, a high dielectric material (HfO 2 ) has been added. Various parameters such as scaling of device, thermal effect, ON-resistance and capacitances, equivalent oxide thickness, capacitance equivalent thickness, and breakdown of a CSDG MOSFET has been discussed. This provides an improved MOSFET to drive the nanotechnology circuit with minimum signal propagation delay.

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