Design and Simulation of GaSb/InAs 2D Transmission-Enhanced Tunneling FETs

Long, Pengyu; Wilson, Emma; Huang, Jun; Klimeck, Gerhard; Rodwell, M.J.W.; Povolotskyi, Michael

doi:10.1109/led.2015.2497666

Cited by 20 publications

(7 citation statements)

References 19 publications

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“…Heterojunction TFETs have been simulated by using the NEGF approach with both a TB [83,115,132,133], and a · k p Hamiltonian [62,124,126,131,134]. The use of the GaSb/InAs hetero-junction usually provides a larger I ON compared to InAs homojunction TFETs, but such a potential improvement is partly frustrated by quantum confinement effects that tend to turn the supposedly broken-bandgap GaSb/InAs hetero-junction into an actually staggered band alignment system, as illustrated in figure 15.…”

Section: Hetero-junction Modeling and Engineeringmentioning

confidence: 99%

A review of selected topics in physics based modeling for tunnel field-effect transistors

Esseni

Pala

Palestri

et al. 2017

Semicond. Sci. Technol.

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The research field on tunnel-FETs (TFETs) has been rapidly developing in the last ten years, driven by the quest for a new electronic switch operating at a supply voltage well below 1 V and thus delivering substantial improvements in the energy efficiency of integrated circuits. This paper reviews several aspects related to physics based modeling in TFETs, and shows how the description of these transistors implies a remarkable innovation and poses new challenges compared to conventional MOSFETs. A hierarchy of numerical models exist for TFETs covering a wide range of predictive capabilities and computational complexities. We start by reviewing seminal contributions on direct and indirect band-to-band tunneling (BTBT) modeling in semiconductors, from which most TCAD models have been actually derived. Then we move to the features and limitations of TCAD models themselves and to the discussion of what we define non-self-consistent quantum models, where BTBT is computed with rigorous quantum-mechanical models starting from frozen potential profiles and closed-boundary Schrödinger equation problems. We will then address models that solve the open-boundary Schrödinger equation problem, based either on the non-equilibrium Green's function NEGF or on the quantum-transmitting-boundary formalism, and show how the computational burden of these models may vary in a wide range depending on the Hamiltonian employed in the calculations. A specific section is devoted to TFETs based on 2D crystals and van der Waals hetero-structures. The main goal of this paper is to provide the reader with an introduction to the most important physics based models for TFETs, and with a possible guidance to the wide and rapidly developing literature in this exciting research field.

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Section: Hetero-junction Modeling and Engineeringmentioning

confidence: 99%

A review of selected topics in physics based modeling for tunnel field-effect transistors

Esseni

Pala

Palestri

et al. 2017

Semicond. Sci. Technol.

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“…Numerous studies about tunnel field-effect transistor (TFET) have been performed by several research groups as a promising device for an ultra-low power operation [1,2,3,4]. In case of metal-oxide-semiconductor FETs (MOSFETs), there exist a theoretical limit of 60 mV/dec subthreshold swing (SS) at 300 K-temperature because their carrier injection is based on the thermionic emission [5,6]. On the other hand, TFETs are relatively independent to the Boltzmann distribution since the function tail is removed by forbidden gap and the band-to-band tunneling (BTBT) dominates the carrier injection from source to channel [7,8].…”

Section: Introductionmentioning

confidence: 99%

Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain

Kim

Kım

et al. 2019

Micromachines

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In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (ION) and low-level OFF-state current (IOFF); ambipolar current (IAMB). In detail, its ION is enhanced by 24 times more than that of Si control group and by 6 times more than of SiGe control group. The IAMB can be reduced by up to 900 times compared with the SiGe control group. In addition, technology computer-aided design (TCAD) simulation is performed to optimize electrical performance. Then, the benchmarking of ON/OFF current is also discussed with other research group’s results.

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“…To boost up ON current (I ON ), different methods of structural/device modifications are explored in the literature . It has been reported that the vertical TFETs with the gate field aligned in the tunneling direction, multiple barriers introduced in the channel of the device contributes to high I ON . Recently, L‐shaped channel device, heterojunction TFET with T‐shaped gate overlap with N+ pockets, polarity controlled electrically doped TFET (ED‐TFET) based on bandgap engineering are reported for obtaining improved I ON …”

Section: Introductionmentioning

confidence: 99%

“…11 It has been reported that the vertical TFETs with the gate field aligned in the tunneling direction, multiple barriers introduced in the channel of the device contributes to high I ON . 12,13 Recently, L-shaped channel device, heterojunction TFET with T-shaped gate overlap with N+ pockets, polarity controlled electrically doped TFET (ED-TFET) based on bandgap engineering are reported for obtaining improved I ON . [14][15][16] In our previous studies, we introduced an asymmetric gate oxide in the gate-drain overlap of double gate (DG) TFETs and radio frequency (RF) performance was compared against DG TFETs by varying geometrical and doping parameters.…”

Section: Introductionmentioning

confidence: 99%

Investigation of geometrical and doping parameter variations on GaSb/Si‐based double gate tunnel FETs: A qualitative and quantitative approach for RF performance enhancement

Shanmuganathan

Balasubramanian

2019

Int J Numerical Modelling

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This paper compares the radio frequency (RF) performance enhancement of GaSb/Si‐based double gate (DG) tunnel field‐effect transistors (TFETs) and DG TFETs with gate‐drain overlap devices using technology computer‐aided design (TCAD) simulations. The geometrical parameters taken under consideration are gate length (Lg), gate oxide thickness (tox), channel thickness (tch), and doping parameters are channel doping (Nch), drain doping (Nd), and source doping (Ns). These parameters are varied to extract the RF parameters, cut‐off frequency (ft), maximum oscillation frequency (fmax), intrinsic gain, and admittance (Y) parameters. DG TFET with gate‐drain overlap offers highest fmax values of 977 GHz for drain doping of 1e20 cm−3. Higher values of output resistance (Ro) results in high intrinsic gain values for DG TFET with gate‐drain overlap. In terms of Y parameters, DG TFET with gate‐drain overlap shows better Y11 and Y22 values compared with DG TFET. A quantitative model as a function of geometrical and doping parameters is modelled for all the RF parameters that validate the simulated values and predicted values.

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Design and Simulation of GaSb/InAs 2D Transmission-Enhanced Tunneling FETs

Cited by 20 publications

References 19 publications

A review of selected topics in physics based modeling for tunnel field-effect transistors

A review of selected topics in physics based modeling for tunnel field-effect transistors

Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain

Investigation of geometrical and doping parameter variations on GaSb/Si‐based double gate tunnel FETs: A qualitative and quantitative approach for RF performance enhancement

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