Transistor Performance Scaling: The Role of Virtual Source Velocity and Its Mobility Dependence

Khakifirooz, A.; Antoniadis, D.A.

doi:10.1109/iedm.2006.346873

Cited by 78 publications

(56 citation statements)

References 5 publications

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“…In contrast with the theoretical predictions that v sat is independent of μ eff (Thornber, 1980), the experimental data show that the carrier velocity in the nanoscale transistor and the lowfield mobility are actually related (Khakifirooz & Antoniadis, 2006). This can be better understood as follows.…”

Section: Classical Drain Current Equations For Mos Transistorscontrasting

confidence: 49%

“…23b). Since the relationship between the carrier velocity and the low-field mobility is wellestablished (Khakifirooz & Antoniadis, 2006), we can have a better understanding of the apparent velocity saturation in the nanoscale MOS transistors by looking at the mobility. A strong reduction of mobility is typically observed in the silicon-based MOS transistors when the gate length is scaled (Romanjek et al, 2004;Cros et al, 2006;Cassé et al, 2009;Huet et al, 2008;Fischetti & Laux, 2001).…”

Section: Virtual Source Model For Nanoscale Transistors In Saturationmentioning

confidence: 99%

See 1 more Smart Citation

The Evolution of Theory on Drain Current Saturation Mechanism of MOSFETs from the Early Days to the Present Day

Yang¹,

Lai²,

Chan³

2010

Solid State Circuits Technologies

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Section: Classical Drain Current Equations For Mos Transistorscontrasting

confidence: 49%

Section: Virtual Source Model For Nanoscale Transistors In Saturationmentioning

confidence: 99%

The Evolution of Theory on Drain Current Saturation Mechanism of MOSFETs from the Early Days to the Present Day

Yang¹,

Lai²,

Chan³

2010

Solid State Circuits Technologies

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“…Moreover, multisubband Monte Carlo simulations [4] have confirmed the significant impact on performance of an increase of injection velocity. It has been reported recently that the carrier mobility is closely correlated with the carrier velocity [5]. This parameter is thus a key figure of merit of devices operating in the quasi-ballistic regime, so an understanding of how the ballistic injection velocity is related to band structure is important in understanding device physics and assessing performance limits.…”

mentioning

confidence: 99%

A Tight-Binding Study of the Ballistic Injection Velocity for Ultrathin-Body SOI MOSFETs

Liu

Neophytou

Low

et al. 2008

IEEE Trans. Electron Devices

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Abstract-This paper examines the validity of the widely used parabolic effective mass approximation by computing the ballistic injection velocity of a double-gate, ultrathin-body (UTB) n-MOSFET. The energy dispersion relations for a Si UTB are first computed by using a 20-band sp 3 d 5 s * -SO semiempirical atomistic tight-binding (TB) model coupled with a self-consistent Poisson solver. A semiclassical ballistic FET model is then used to evaluate the ballistic injection velocity of the n-type UTB MOSFET based on both an TB dispersion relation and parabolic energy bands. In comparison with the TB approach, the parabolic band model with bulk effective masses is found to be reasonably accurate as a firstorder approximation until down to about 3 nm, where the ballistic injection velocity is significantly overestimated. Such significant nonparabolicity effects on ballistic injection velocity are observed for various surface/transport orientations. Meanwhile, the injection velocity shows strong dependence on the device structure as the thickness of the UTB changes. Finally, the injection velocity is found to have the same trend as mobility for different surface/transport orientations, indicating a correlation between them.Index Terms-Band structure, effective mass, injection velocity, MOSFETs, nonparabolicity, pseudopotential (PP), quantum confinement, tight-binding (TB), ultrathin-body (UTB).

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“…However, this experimental screening was done at two levels as indicated in Figure 13. Six new test structures with multiple levels of source/drain area are designed to systematically characterize Khakifirooz demonstrated that with scaling of devices, the source of a device has a larger impact on transistor mobility than that of the drain [11]. Test structures with asymmetric source/drain area are designed to corroborate Khakifirooz observations.…”

Section: Source/drain Stress and Sti Stress Monitorsmentioning

confidence: 69%

Parameter-specific electronic measurement and analysis of sources of variation using ring oscillators

et al. 2009

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Parameter-specific and simulation-calibrated ring oscillator (RO) inverter layouts are described for identifying and quantitatively modeling sources of circuit performance variation from source/drain stress, shallow trench isolation (STI) stress, lithography, etch, and misalignment. This paper extends the RO approach by adding physical modeling/simulation of the sources of variability to tune the layouts of monitors for enhanced sensitivity and selectivity. Poly and diffusion layout choices have been guided by fast-CAD pattern matching. The accuracy of the fast-CAD estimate from the Pattern Matcher for these lithography issues is corroborated by simulations in Mentor Graphics Calibre. Generic conceptual results are given based on the experience from preparing of proprietary layouts that pass DRC check for a 45 nm test chip with ST Micro. Typical improvements in sensitivity of 2 fold are possible with layouts for lithography focus. A layout monitor for poly to diffusion misalignment based on programmable off-sets shows a 0.8% change in RO frequency per 1nm poly to diffusion off-set. Layouts are also described for characterizing stress effects associated with diffusion area size, asymmetry, vertical spacing, and multiple gate lengths.

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Transistor Performance Scaling: The Role of Virtual Source Velocity and Its Mobility Dependence

Cited by 78 publications

References 5 publications

The Evolution of Theory on Drain Current Saturation Mechanism of MOSFETs from the Early Days to the Present Day

The Evolution of Theory on Drain Current Saturation Mechanism of MOSFETs from the Early Days to the Present Day

A Tight-Binding Study of the Ballistic Injection Velocity for Ultrathin-Body SOI MOSFETs

Parameter-specific electronic measurement and analysis of sources of variation using ring oscillators

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