Transient effects in PD SOI NMOSFETs

In this study, a bulk fin-type field-effect transistor (FinFET)–based capacitorless one-transistor dynamic random-access memory (1T-DRAM) was proposed. The fabrication process of the proposed 1T-DRAM was similar to that of a typical junctionless bulk FinFETs, except that the p-type doped body fin region operated as a charge storage region. The effects of the geometrical variations, such as the fin angle (θfin) variation and line edge roughness (LER), which are inevitable in fabrication, on the transfer characteristics and memory performance of the proposed 1T-DRAM were studied. θfin was varied from 90° to 80°, and 200 samples with the LER were analyzed. Results revealed that the transfer characteristics and memory performance were affected by geometrical variations. However, the proposed 1T-DRAM exhibited an excellent retention time in all cases because the charge storage region was separated from the region of operation.

Section: Device Structure and Simulation Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Bulk fin-type field-effect transistor-based capacitorless dynamic random-access memory with strong resistance to geometrical variations

Kim,

Lee,

Park

et al. 2024

“…Therefore, the 1T-DRAM cells based on partially depleted (PD) or fully depleted (FD) silicon-on-insulator (SOI) technology have been proposed as alternative candidates for future DRAM application. [2][3][4][5][6][7][8][9][10][11][12] Basically, the 1T-DRAM cells utilize a distinctive floating body effect of SOI wafer, and the neutral body regions of the top silicon channel are able to store the charges. Consequently, additional processes for complicated 3D capacitors of conventional DRAM cell are unnecessary.…”

Section: Introductionmentioning

confidence: 99%

Channel Recessed One Transistor Dynamic Random Access Memory with SiO₂/Si₃N₄/SiO₂ Gate Dielectric

Park¹,

Yang²,

Cho³

2012

The very first low-frequency infrared absorption and Raman scattering spectra of TTF-CA are presented. Several studies have been performed as a function of temperature at atmospheric pressure. In the neutral phase by infrared absorption, we have emphasized the critical behaviour of an antisymmetric lattice mode (located around 30 cm −1 at 150 K) which shows the displacive nature of the neutral-to-ionic phase transition of TTF-CA at atmospheric pressure. In the ionic phase, the Raman scattering study has permitted confirmation of this result, the soft mode being located around 105 cm −1 at 16 K. Besides, the Raman study of several totally symmetric internal modes has confirmed the clearly first-order character of this transition. Finally, this study permits an estimation of the e-mv (electron-molecular vibrations) coupling constants in the neutral and ionic phases.

“…Thus, many researchers have been trying to enhance it by accumulating and removing holes in the floating body of a silicon-on-insulator (SOI) wafer. [4][5][6][7][8][9][10][11][12][13] However, although channel doping concentration directly affects the drain current characteristics of the floating body effect in the channel region, no investigations have yet been done on how the doping concentration affects the memory margin of a Cap-less memory cell fabricated on a fully depleted (FD) SOI n-metal-oxide-semiconductor field-effect transistor (n-MOSFET).…”

Section: Introductionmentioning

confidence: 99%

Optimal Channel Ion Implantation for High Memory Margin of Capacitor-Less Memory Cell Fabricated on Fully Depleted Silicon-on-Insulator

Kim¹,

Oh²,

Shim³

et al. 2010

We study the kinetics of a search of a single fixed target by a large number of searchers performing an intermittent biased random walk in a homogeneous medium. Our searchers carry out their walks in one of two states between which they switch randomly. One of these states (search phase) is a nearest-neighbor walk characterized by the probability of stepping in a given direction (i.e. the walks in this state are not necessarily isotropic). The other (relocation phase) is characterized by the length of the jumps (i.e. when in this state a walker does not perform a nearest-neighbor walk). Within such a framework, we propose a model to describe the searchers' dynamics, generalizing results of our previous work. We have obtained, and numerically evaluated, analytic results for the mean number of distinct sites visited up to a maximum evolution time. We have studied the dependence of this quantity on both the transition probability between the states and the parameters that characterize each state. In addition to our theoretical approach, we have implemented Monte Carlo simulations, finding excellent agreement between the theoretical-numerical and simulations results.