Channel Recessed One Transistor Dynamic Random Access Memory with SiO₂/Si₃N₄/SiO₂ Gate Dielectric

Abstract

The very first low-frequency infrared absorption and Raman scattering spectra of TTF-CA are presented. Several studies have been performed as a function of temperature at atmospheric pressure. In the neutral phase by infrared absorption, we have emphasized the critical behaviour of an antisymmetric lattice mode (located around 30 cm −1 at 150 K) which shows the displacive nature of the neutral-to-ionic phase transition of TTF-CA at atmospheric pressure. In the ionic phase, the Raman scattering study has permitted confirmation of this result, the soft mode being located around 105 cm −1 at 16 K. Besides, the Raman study of several totally symmetric internal modes has confirmed the clearly first-order character of this transition. Finally, this study permits an estimation of the e-mv (electron-molecular vibrations) coupling constants in the neutral and ionic phases.