Transient Currents Generated by Heavy Ions With Hundreds of MeV

Transient current mapping obtained from silicon photodiodes using focused ion microbeams with several hundreds of MeV

“…3(c) represents the transient currents at the center on a log scale. The carrier dynamics after an ion strike has been studied by Technology Computer Aided Design for the same DUTs used in the previous works [7,10]. The dynamics can be simplified into the ambipolar, the bipolar and the diffusion phases.…”

“…However the available energy range of microbeams at present systems is much lower than that of a Galactic Cosmic Ray (GCR) because it is well known that a GCR consists of a lot of heavy ions, which energy reaches hundreds of GeV/amu with a peak flux at a few hundred MeV/amu [5]. We have reported the TIBIC image observed by using the high-energy collimated 150 MeV Argon (Ar) beam from the AVF Cyclotron [10]. The major drawback of this system is the beam size resulting in the poor resolution of more than 5 lm.…”

The Role of Ion Track Structure on High-Injection Carrier Dynamics in High-Speed Si and III-V Optoelectronic Sensors

“…Note the -phase gradient also decreases with increasing injection. The data clearly illustrates that track structure can lead to differing pulse shapes for certain device structure/plasma configurations [3], [20]. For the defocused case with a track width similar to junction diameter, the transient current is larger and faster, illustrating minimal screening compared to the focused case.…”

Impact of Auger Recombination on Charge Collection of a 6H-SiC Diode by Heavy Ions

“…It is well known that the initial track structure strongly affects the carrier dynamics in devices and, thus, the shape of transient current waveform [38], [39]. The distributions of e-h pairs could be calculated by the method developed by Kobetich and Katz (KK) [40].…”