Impact of Auger Recombination on Charge Collection of a 6H-SiC Diode by Heavy Ions

Abstract

Charge collection efficiency (CCE) generated in a 6H-SiC p + n diode by impact of heavy ions was evaluated by the transient ion beam induced current (TIBIC) technique. Numerical analysis by using technology computer aided design (TCAD) concludes that the Auger recombination process reduces CCE. Comparing experimentally measured CCEs with calculated ones revealed that the ambipolar Auger coefficient of about 3 10 29 cm 6 .

Transient Response to High Energy Heavy Ions in 6H-SiC n⁺p Diodes

“…The measured transient responses in Si PIN diodes after an ion strike with a wide variety of incident energies as shown in Fig. 1 (a) can be understood as we have suggested in previous papers [6,7]. Turning now to discuss the transient response in 6H-SiC n + p diodes after an ion strike, it is found that the slopes of transient current in 6H-SiC n + p diodes differ greatly from those in Si PIN diodes, as shown in Figs.…”

“…Before discussing transient response in SiC, we will here review that in Si PIN diodes. To understand the carrier dynamics in Si PIN diodes, numerical calculations using a Technology Computer Aided Design (TCAD) simulator provided by Synopsys has been carried out [6,7]. In the case of 15MeV-O, the charge collection dynamics can be simplified into the following three phases.…”

“…However, it is notable that the KK model does not include the influence of optical phonon interactions which occur in polar materials like SiO 2 and SiC. Since the radius of the ion track is reduced by this effect, the real carrier density at the core of the ion track should be higher than the value estimated using the KK model [7]. Thus, the carrier density of the initial ion track in Si and SiC are on the same order of magnitude, and the reason why the plasma collapses earlier in SiC can not be explained by the initial ion track structure.…”

“…To compare the carrier density in the initial ion tracks in Si with that in SiC, these values were calculated using the Kobetich and Katz (KK) model [9]. For this calculation, since the energy for the generation of an e-h pair (E e-h ) in 6H-SiC has not yet been determined [8], the value is assumed to be 7.8 eV (i.e., 2.8 E g ), calculating in the same manner as in previous studies [7]. For atomic number (Z) and mass (A), the average values 10 [i.e., (6+14)/2] for Z and 20 [i.e., (12+28)/2] for A were adopted.…”

A single-event transient induced by a pulsed laser in a silicon—germanium heterojunction bipolar transistor

“…The first path with larger R c would obviously present higher impedance compared with the other two paths, thus less electrons would pass through R c and are collected by V CC eventually. On the other hand, a larger R c leads to longer discharging time and more electrons, which would have been collected by V CC and tend to annihilate via recombination with holes [15,18] because of the strong forward bias of the CS junction in the course of the multi-path discharge. For a logic inverter with load resistor R c shown in Fig.…”