Transient current mapping obtained from silicon photodiodes using focused ion microbeams with several hundreds of MeV

Hirao, Toshio; Onoda, Shinobu; Oikawa, Masakazu; Satoh, Takahiro; Kamiya, Toshio; Ohshima, Takeshi

doi:10.1016/j.nimb.2009.03.051

Cited by 18 publications

(5 citation statements)

References 11 publications

(12 reference statements)

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“…It requires durable, sensitive particle detectors especially for individual heavy ion irradiation experiment of 260 MeV Ne, 520 MeV Ar, or 220 MeV C from the azimuthally varying field (AVF) cyclotron accelerator [8,9]. In-situ detection techniques for these heavy ions were required for the precise evaluation of the single-hit experiments used for single living-cell irradiation [10,11], surface modification of polymers [12,13], and testing semiconductor devices [14,15]. It is desired to have thin diamond detector on the beam axis that is durable on the heavy ion irradiation for in-situ qualification [16,17].…”

mentioning

confidence: 99%

Continuous observation of polarization effects in thin SC-CVD diamond detector designed for heavy ion microbeam measurement

Kada

Iwamoto

Satoh

et al. 2014

Nuclear Instruments and Methods in Physics Research Section B:

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Continuous irradiation effects on a thin-film diamond detector were investigated for the utilization of these films as a detector for heavy ion microbeams. Temporal signal degradation in the energy spectrum was frequently observed during the focused heavy ion microbeam irradiation. To measure the temporal response to the each ion incidents, focused heavy ion microbeam with different beam fluence rates were irradiated to a Single Crystal (SC)-CVD diamond film detector with thickness of 50 μm. The responses to each ion were continuously observed and characterized by ion beam-induced charge (IBIC) measurement system. Heavy ions with short penetration path in diamond generate the large difference in mean path of electrons and holes, which is inverted by changing bias polarity. Signal degradation condition was relied on the bias polarity under the irradiation of heavy ions with short penetration length in the diamond. The continuous observation of IBIC signals revealed that temporal degradation in pulse height of signals, so called polarization effects, seems to be mainly caused by the hole trapping in this diamond crystal.

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mentioning

confidence: 99%

Continuous observation of polarization effects in thin SC-CVD diamond detector designed for heavy ion microbeam measurement

Kada

Iwamoto

Satoh

et al. 2014

Nuclear Instruments and Methods in Physics Research Section B:

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“…The proposed n-MESFET is formed on 100 nm buried oxide (BOX) layer. This BOX layer provides the support for the MESFET and also used for current transport [13]. The study of Gain compression is studied by using two different materials i.e GaAs and SiC for the proposed n-MESFET.…”

Section: Resultsmentioning

confidence: 99%

Gain Compression of n-MESFET for High Power Applications in MIMO

Soma

2021

Preprint

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In this paper, a new n-type recessed Metal semiconductor field effect transistor (MESFET) with GaAs/ SiC materials is designed for high power applications in Multi Input Multi Output (MIMO) systems. Based on electrical characteristics of MESFET, a SPICE model of the proposed device is developed. For power switches, the power MESFETs are used. The feasibility of the technology is validated by the electrical measurements of the device. The operational technology has been shown by the characterizations done on the proposed device. To optimize the electrical performance, the contact resistance technique has to be enhanced. In this work, the output power and Gain compression of proposed n-channel MESFET at 100 MHz and 1 GHz for high input power is obtained. The output power at fundamental frequency of operation for high input power is also obtained.

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“…The details of the TIBIC system are described elsewhere [11][12][13]. Here the brief description of TIBIC system and experimental conditions are given.…”

Section: B Ion Irradiationsmentioning

confidence: 99%

Spatial, LET and range dependence of enhanced charge collection by single ion strike in 4H-SiC MESFETs

Onoda¹,

Makino²,

Ono³

et al. 2011

2011 12th European Conference on Radiation and Its Effects on Components and Systems

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The spatial dependence of transient currents induced in recessed 4H-SiC MESFETs by various ions with the same Linear Energy Transfer (LET) but different projected ranges is evaluated. The most largest signal is observed when ion strikes the Gate-to-Drain Recess (GDR). In addition, the signals are detected when an ion strikes the Gate-to-Source Recess (GSR), gate and drain. The charge enhancement mechanism is clarified by using numerical simulation. Finally we discuss the effect of ion energy, LET and projected range on the charge enhancement effect. It is found that the early stage of charge collection is insensitive to projected range, energy and diameter of ion track, however, depends on LET. The duration of charge collection is independent of projected range and LET, however, depends on energy. Index Terms 4H-SiC MESFET, bipolar effect, channel modulation effect, Single ion strike

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Transient current mapping obtained from silicon photodiodes using focused ion microbeams with several hundreds of MeV

Cited by 18 publications

References 11 publications

Continuous observation of polarization effects in thin SC-CVD diamond detector designed for heavy ion microbeam measurement

Continuous observation of polarization effects in thin SC-CVD diamond detector designed for heavy ion microbeam measurement

Gain Compression of n-MESFET for High Power Applications in MIMO

Spatial, LET and range dependence of enhanced charge collection by single ion strike in 4H-SiC MESFETs

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