Dynamic spatial control of MOF position is obtained by incorporating carbon‐coated cobalt nanoparticles within metal organic framework (MOF)‐5 crystals. The cobalt framework composite obtained responds efficiently to magnetic stimuli. A luminescent functionality is added, showing that multifunctional MOF devices can be prepared. This new generation of adaptive material is tested as a position‐controlled molecular sensor.
The incorporation of highly luminescent core-shell quantum dots (QDs) within a metal-organic framework (MOF) is achieved through a one-pot method. Through appropriate surface functionalization, the QDs are solubilized within MOF-5 growth media. This permits the incorporation of the QDs within the evolving framework during the reaction. The resulting QD@MOF-5 composites are characterized using X-ray fluorescence, cross-sectional confocal microscopy, energy-dispersive X-ray spectroscopy, scanning electron microscopy, and small-angle X-ray scattering. The synergistic combination of luminescent QDs and the controlled porosity of MOF-5 in the QD@MOF-5 composites is harnessed within a prototype molecular sensor that can discriminate on the basis of molecular size.
The generation of single event transients generated by the impact of high-energy ions in high-speed photodetectors leads to bit error rate degradation in optical communications in radiation hard environments such as space. High-energy heavy ions, in particular, generate a submicron electron-hole pair plasma with a picosecond temporal profile that results in ultrahigh-injection carrier dynamics which induce large space-charge effects. These space-charge effects disturb the local electric field, thereby determining the peak and duration of a single event transient. In this paper, we examine the transient response of Si p-i-n photodetectors irradiated with focused single MeV heavy ions for a range of ion energies chosen to ensure the same end of range but different average plasma densities. We discuss the role of high-injection effects on the evolving spatiotemporal response with the aid of three-dimensional technology computer-aided design software. The result of both measurement and simulation points to charge collection being dominated by three clearly separable phases: (a) an ultrafast bandwidth-limited response which follows the excitation function, (b) an ambipolar diffusion-dominated expansion phase where space-charge screening limits the extracted current, and (c) a bipolar phase where the external field penetrates the electron-hole pair plasma resulting in rapid collection by drift.
The aim of this study was to determine specific distribution of metals in the termite Tumulitermes tumuli (Froggatt) and identify specific organs within the termite that host elevated metals and therefore play an important role in the regulation and transfer of these back into the environment. Like other insects, termites bio-accumulate essential metals to reinforce cuticular structures and utilize storage detoxification for other metals including Ca, P, Mg and K. Previously, Mn and Zn have been found concentrated in mandible tips and are associated with increased hardness whereas Ca, P, Mg and K are accumulated in Malpighian tubules. Using high resolution Particle Induced X-Ray Emission (PIXE) mapping of whole termites and Scanning Electron Microscope (SEM) Energy Dispersive X-ray (EDX) spot analysis, localised accumulations of metals in the termite T. tumuli were identified. Tumulitermes tumuli was found to have proportionally high Mn concentrations in mandible tips. Malpighian tubules had significant enrichment of Zn (1.6%), Mg (4.9%), P (6.8%), Ca (2.7%) and K (2.4%). Synchrotron scanning X-ray Fluorescence Microprobe (XFM) mapping demonstrated two different concretion types defined by the mutually exclusive presence of Ca and Zn. In-situ SEM EDX realisation of these concretions is problematic due to the excitation volume caused by operating conditions required to detect minor amounts of Zn in the presence of significant amounts of Na. For this reason, previous researchers have not demonstrated this surprising finding.
Theoretical aspects of a new technique for the MeV ion microbeam are described in detail for the first time. The basis of the technique, termed scanning ion deep level transient spectroscopy (SIDLTS), is the imaging of defect distributions within semiconductor devices. The principles of SIDLTS are similar to those behind other deep level transient spectroscopy (DLTS) techniques with the main difference stemming from the injection of carriers into traps using the localized energy-loss of a focused MeV ion beam. Energy-loss of an MeV ion generates an electron-hole pair plasma, providing the equivalent of a DLTS trap filling pulse with a duration which depends on space-charge screening of the applied electric field and ambipolar erosion of the plasma for short ranging ions. Some nanoseconds later, the detrapping current transient is monitored as a charge transient. Scanning the beam in conjunction with transient analysis allows the imaging of defect levels. As with DLTS, the temperature dependence of the transient can be used to extract trap activation levels. In this, the first of a two-part paper, we introduce the various stages of corner capture and derive a simple expression for the observed charge transient. The second paper will illustrate the technique on a MeV ion implanted Au-Si Schottky junction.
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