Through the use of photoelectron spectroscopy in air (PESA), we investigate the size-dependent valence and conduction band-edge energies of CdSe, CdTe, PbS, and PbSe semiconductor quantum dots (QDs). The results are compared to those of previous studies, based on differing experimental methods, and to theoretical calculations based on k·p theory and state-of-the-art atomistic semiempirical pseudopotential modeling. To accurately map out the energy level landscapes of QDs as a function of size, the QDs must be passivated by comparable surface chemistries. This is highlighted by studying the effect of surface chemistry on the valence band-edge energy in an ensemble of 4.7 nm CdSe QDs. An energy level shift as large as 0.35 eV is observed for this system through modification of surface chemistry alone. This shift is significantly larger than the size-dependent valence band-edge shift that is observed when comparable surface chemistries are used.

We investigate the size-dependent optical absorption coefficients of CdSe nanocrystals at both the band-edge and high within the absorption profile. The absorption properties in both of these regions must be selfconsistent to ensure accuracy of the measured coefficients. By combining transmission electron microscopy and inductively coupled plasma-optical emission spectroscopy, we map out the optical absorption properties and establish reliable size-dependent band-edge calibration curves. The measured absorption properties are compared to a simple 0D confinement model, to classical theory based on light absorption by small particles in a dielectric medium and to state-of-the-art atomistic semiempirical pseudopotential modeling. The applicability of these newly established calibration curves is demonstrated by analyzing the nucleation and growth kinetics of CdSe nanocrystals in solution.

We report a protocol for manipulating the surface composition of CdSe nanocrystals. By combining the successive ion layer adhesion and reaction (SILAR) method developed by Li et al. J. Am. Chem. Soc. 2003, 125, 12567 with a phosphine-free selenium precursor, the surface stoichiometry of CdSe can be tunably altered from Cd- to Se-rich. By changing the overall surface stoichiometry, we demonstrate ligand binding to specific surface sites. Tertiary phosphines produce a dramatic enhancement in photoluminescence quantum yield of CdSe particles with Se-rich surfaces but have little effect on Cd-rich surfaces. Unpassivated selenium surface sites are also shown to be a cause of the photobrightening behavior of CdSe nanocrystals.

The successful transition of any nanocrystal-based product from the research phase to the commercial arena hinges on the ability to produce the required nanomaterial on large scales. The synthesis of colloidal nanocrystals using a heat-up (non-injection) method is a reliable means to achieve high quality nanomaterials on large scales with little or no batch-to-batch variation. In this class of synthesis precursors are heated within a reaction medium to induce a chemical reaction that yields monomer for nucleation and growth. Use of the heat-up technique circumvents the pitfalls of mixing time and poor heat management inherent to classical “hot-injection” methods. In heat-up syntheses monomer is produced in a more continuous fashion during the heating stage, making it more difficult to separate the nucleation and growth stages of the reaction, a factor that is conventionally considered detrimental toward achieving homogeneous colloidal dispersions. However, through the judicious selection of precursors, stabilizers, and reaction heating rates, these stages can be managed to yield colloids of comparable quality to those achieved via classical hot-injection methods. In this review we provide the reader with a fundamental basis upon which to understand the reaction requirements for achieving such favorable growth conditions. Given that the most important consideration in these reactions is precursor (and stabilizer) selection, we also provide an exposition of the precursor chemistry appropriate to achieving high quality products when using heat-up techniques. These topics form the foundation for critically evaluating the field of heat-up nanocrystal synthesis to date, including the synthesis of binary, ternary, and quaternary metal chalcogenide and pnictogenide nanocrystals, as well as metallic, metal oxide, and f-block conaining nanocrystals.

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High quality CdSe nanocrystals have been prepared using elemental selenium as the chalcogenide precursor dispersed in 1-octadecene (ODE). The conditions used to prepare the Se precursor were found to be critical for successful nanocrystal synthesis. Systematic titration of the Se precursor solution with tri-n-octylphosphine (TOP) allowed the Se reactivity to be tuned and the final particle size to be controlled. Band-edge and surface related emission were observed for samples prepared in the presence and absence of added TOP. In the absence of a selenium passivant, the crystal structure of CdSe nanocrystals could be altered from zinc blende to wurtzite by the addition of bis(2,2,4-trimethylpentyl)phosphinic acid (TMPPA).

Solar cells made by high temperature and vacuum processes from inorganic semiconductors are at a perceived cost disadvantage when compared with solution-processed systems such as organic and dye-sensitized solar cells. We demonstrate that totally solution processable solar cells can be fabricated from inorganic nanocrystal inks in air at temperature as low as 300 °C. Focusing on a CdTe/ZnO thin-film system, we report solar cells that achieve power conversion efficiencies of 6.9% with greater than 90% internal quantum efficiency. In our approach, nanocrystals are deposited from solution in a layer-by-layer process. Chemical and thermal treatments between layers induce large scale grain formation, turning the 4 nm CdTe particles into pinhole-free films with an optimized average crystallite size of ∼70 nm. Through capacitance-voltage measurements we demonstrate that the CdTe layer is fully depleted which enables the charge carrier collection to be maximized.

A simple, solution‐processed route to the development of MoOx thin‐films using oxomolybdate precursors is presented. The chemical, structural, and electronic properties of these species are characterized in detail, within solution and thin‐films, using electrospray ionization mass spectrometry, grazing angle Fourier transform infrared spectroscopy, thermogravimetric analysis, atomic force microscopy, X‐ray photoelectron spectroscopy, and ultraviolet photoelectron spectroscopy. These analyses show that under suitable deposition conditions the resulting solution processed MoOx thin‐films possess the appropriate morphological and electronic properties to be suitable for use in organic electronics. This is exemplified through the fabrication of poly(3‐hexylthiophene):[6,6]‐phenyl C61 butyric acid methyl ester (P3HT:PC61BM) bulk heterojunction (BHJ) solar cells and comparisons to the traditionally used poly(3,4‐ethyldioxythiophene)/poly(styrenesulfonate) anode modifying layer.