Transient charge collection from ion tracks in semiconductors

McMorrow, D.; Campbell, A.B.; Knudson, A.R.; Büchner, S.; Weatherford, T.R.

doi:10.1016/0168-583x(92)95837-h

Cited by 5 publications

(1 citation statement)

References 14 publications

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“…The soft error issue was unresolved and required additional investigation [69]. SRAM soft error tests [70], [71] and charge collection experiments [72], [73], with the help of device simulation tools [74], determined that the SEE sensitivity was related to several items: 1) the uninsulated GaAs FET gate; 2) hole collection in the semi-insulating substrate that provided a mechanism to induce a bipolar transistor effect [73] or back-gate [74]; and 3) the low-doped substrate that provided long diffusion lengths, which increased collection volumes. Also, as noted in Table I, the ionization in GaAs per unit length is higher than that of silicon.…”

Section: Radiation Effects In the 1990smentioning

confidence: 99%

Historical perspective on radiation effects in III-V devices

Weatherford

Anderson²

2003

IEEE Trans. Nucl. Sci.

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Section: Radiation Effects In the 1990smentioning

confidence: 99%

Historical perspective on radiation effects in III-V devices

Weatherford

Anderson²

2003

IEEE Trans. Nucl. Sci.

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Scanning picosecond tunable laser system for simulating MeV heavy ion-induced charge collection events as a function of temperature

Laird

Chen

Scheick

et al. 2008

Review of Scientific Instruments

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A new methodology for using scanning picosecond laser microscopy to simulate cosmic ray induced radiation effects as a function of temperature is described in detail. The built system is centered on diffraction-limited focusing of the output from a broadband (690-960 nm) ultrafast Ti:sapphire Tsunami laser pumped by a 532 nm Millennia laser. An acousto-optic modulator is used to provide pulse picking down to event rates necessary for the technologies and effects under study. The temperature dependence of the charge generation process for ions and photons is briefly reviewed and the need for wavelength tunability is discussed. An appropriate wavelength selection is critical for proper emulation of ion events over a wide temperature range. The system developed is detailed and illustrated by way of example on a deep-submicron complementary metal-oxide semiconductor test structure.

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