Transformation behavior of metastable defects induced in n-type silicon by hydrogen implantation

Physica Status Solidi (a)

Ogura

Matsumoto

et al. 2016

We studied the influence of misorientation angles and directions of single crystal diamond (111) substrates on the surface morphology of homoepitaxial diamond (111) films grown by microwave plasma‐enhanced chemical vapor deposition (CVD) in the anisotropic lateral growth mode. Hillocks were completely suppressed on the diamond (111) films grown by CVD on the substrates with misorientation angles of 2° and 4°, while hillocks were formed on the CVD‐grown diamond (111) films on the substrates with misorientation angles of 0° and 1°. In addition, an atomically flat diamond (111) film was grown on the substrate with a misorientation angle of 2° toward the true〈true1¯true1¯2true〉 direction, while rough films were grown on the substrate with a misorientation angle of 2° toward the 〈11true2¯〉 direction.

mentioning

confidence: 95%

Influence of substrate misorientation on the surface morphology of homoepitaxial diamond (111) films

Physica Status Solidi (a)

Ogura

Matsumoto

et al. 2016

“…11. [5][6][7][8] However, the present isothermal DLTS experiments indicate that EM1 and EM2 are stable under reverse bias and zero bias, respectively. In temperature-scan DLTS, repeated bias pulses are used to improve the signal-to-noise ratio of DLTS signals.…”

Section: For Zero Bias ͑I͒mentioning

confidence: 54%

“…3. 2, state A − ͑filled state͒ is transformed to the stable state under zero bias, designated as state B − ͑filled state͒, by zero-bias annealing above 200 K, and the reverse transformation B 0 ͑empty state͒ → A 0 ͑empty state͒ occurs by reverse-bias annealing above 250 K. State B has not been observed by DLTS in the measurement temperature range up to 290 K. [5][6][7][8] State A − is also transformed to the stable state under zero bias, state C − ͑filled state͒, during the application of filling pulses at temperatures where EM1 is observed in DLTS spectra. 3.…”

Section: B Isothermal Dltsmentioning

confidence: 95%

“…[5][6][7][8] These metastable defects labeled EM1, EM2, and EM3 are observed in oxygen-rich n-type silicon implanted with hydrogen ions at 88 K and subsequently heated to room temperature. [5][6][7][8] These metastable defects labeled EM1, EM2, and EM3 are observed in oxygen-rich n-type silicon implanted with hydrogen ions at 88 K and subsequently heated to room temperature.…”

Section: Transformation Behavior Of Room-temperature-stable Metastablmentioning

confidence: 99%

See 1 more Smart Citation

Transformation behavior of room-temperature-stable metastable defects in hydrogen-implanted n-type silicon studied by isothermal deep-level transient spectroscopy

Journal of Applied Physics

2006

High resolution deep level transient spectroscopy studies of the vacancy-oxygen and related defects in ionimplanted siliconProperties of metastable hydrogen-related defects in n-type GaAs studied by isothermal deep-level transient spectroscopy Isothermal deep-level transient spectroscopy ͑DLTS͒ with a single pulse has been used to study the transformation behavior of hydrogen-related metastable defects labeled EM1 ͑E c − 0.28 eV͒ and EM2 ͑E c − 0.37 eV͒, which are observed in n-type silicon implanted with hydrogen ions at 88 K and subsequently heated to room temperature. EM1 shows the anomalous filling behavior that its isothermal DLTS peak height decreases exponentially with filling pulse duration time in the range from 1 ms to 1000 s. A corresponding exponential increase in EM2 peak height is found. This indicates that EM1 filled with electrons is transformed into EM2 during the application of filling pulse. The dependence of EM1 and EM2 peak heights on the emission time between two adjacent filling pulses reveals the transformation from EM2 to EM1 with fast rates after electron emission of EM2. This shows that EM1 and EM2 are different configurations of the same defect and are stable under reverse bias and zero bias, respectively. The rate equations governing the emission, capture, and transformation kinetics for EM1 and EM2 are solved to extract those parameters. The electron emission rate of EM2 and the transformation rate from EM1 to EM2 are found to be dependent on electric field. It is suggested that the hydrogen-related metastable defect is donorlike.

“…Moreover, we have discovered the introduction of hydrogenrelated metastable defects in n-type silicon implanted with hydrogen at 88 K and subsequently heated to room temperature. [5][6][7][8][9] In this work, we have studied the production behavior of defects in hydrogen-implanted n-type silicon by varying the implantation temperature in the range from 88 K to 303 K. After implantation, sample temperature was returned to room temperature. DLTS measurements were carried out to reveal electron trap spectra for Schottky diodes fabricated after implantation.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of Defect Production Rates in n-Type Silicon by Hydrogen Implantation Near 270 K

Nagae

Sakane³

et al. 2010

Journal of Elec Materi

Defect production behavior in hydrogen-implanted n-type silicon has been studied by varying the implantation temperature from 88 K to 303 K. Deep-level transient spectroscopy has been used to reveal electron trap spectra for Schottky diodes fabricated at room temperature after implantation. Metastable defects are observed in addition to vacancy-and hydrogen-related defects. It is found that the production rates of these defects are greatly enhanced by hydrogen implantation near 270 K. It is suggested that hydrogen plays an important role in enhancement of defect production rates, since such defect production behavior is not observed in He-implanted samples.