Influence of substrate misorientation on the surface morphology of homoepitaxial diamond (111) films

Abstract

We studied the influence of misorientation angles and directions of single crystal diamond (111) substrates on the surface morphology of homoepitaxial diamond (111) films grown by microwave plasma‐enhanced chemical vapor deposition (CVD) in the anisotropic lateral growth mode. Hillocks were completely suppressed on the diamond (111) films grown by CVD on the substrates with misorientation angles of 2° and 4°, while hillocks were formed on the CVD‐grown diamond (111) films on the substrates with misorientation angles of 0° and 1°. In addition, an atomically flat diamond (111) film was grown on the substrate with a misorientation angle of 2° toward the true〈true1¯true1¯2true〉 direction, while rough films were grown on the substrate with a misorientation angle of 2° toward the 〈11true2¯〉 direction.

Electron Emission Mechanism of Heavily Phosphorus‐Doped Diamond with Oxidized Surface

“…The measured electron affinity was smaller than our previous estimation (+1.2 to 1.5 eV) . A possible cause of the difference can be misorientation of the substrate surface, although the details are to be investigated. In addition, Fermi level of the P‐doped diamond was estimated from Fermi edge of a gold reference sample.…”

Engineering quantum-coherent defects: the role of substrate miscut in chemical vapor deposition diamond growth

“…This model also predicts a critical angle, θ C = s/v s T h , at which the number of hillocks goes to zero, a result that is consistent with other observations of the hillock defect 29 and implies that at θ C the step length is not large enough to support a hillock before lateral growth of a step edge reaches it. Fitting data in Fig.…”

“…Further, the gentle, bottom-up incorporation of nitrogen into this matrix via insitu doping provides a means for both controlling the depth localization to the nanometer scale 21 and for reliably producing homogeneous, coherent NV ensembles. 18 The technique a) Electronic mail: simonmeynell@physics.ucsb.edu of CVD growth is well understood, 7 and previous works have explored dopant incorporation into diamond films, 16,29,30 but few studies consider defect density and localization with the requirements of quantum applications in mind.…”

Inversion-type p-channel diamond MOSFET issues

“…Obviously, heteroepitaxial growth of diamond requires further improvements before high-quality MOSFETs can be realized. With the "lateral overgrowth technique" [63][64][65][66][67][68], a better surface can be grown to form atomically flat diamond surfaces, with the aim to reduce the RMS significantly. By these ways, the device performance of the inversion-type p-channel heteroepitaxial diamond MOSFETs can be improved, which would facilitate the commercialization of diamond electronic applications like power devices significantly.…”